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| 型號(hào)： | TN28F010-90 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| 中文描述： | 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 |
| 封裝： | 0.450 X 0.550 INCH, PLASTIC, LCC-32 |
| 文件頁(yè)數(shù)： | 20/33頁(yè) |
| 文件大小： | 895K |
| 代理商： | TN28F010-90 |
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28F010
E
20
4.4
DC Characteristics
—TTL/NMOS Compatible—Commercial Products
(Continued)
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
I
ID
A
9
Intelligent Identifier
Current
1, 2
90
200
μA
A
9
= V
ID
V
PPL
V
PP
during Read-Only
Operations
0.00
6.5
V
NOTE:
Erase/Program are
Inhibited when V
PP
= V
PPL
V
PPH
V
PP
during Read/Write
Operations
11.40
12.60
V
V
LKO
V
CC
Erase/Write Lock
Voltage
2.5
V
NOTES:
Sampled, not 100% tested.
1.
All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0 V, V
PP
= 12.0 V, T = 25 °C. These currents are
valid for all product versions (packages and speeds).
2.
Not 100% tested: characterization data available.
3.
“Typicals” are not guaranteed, but based on a limited number of samples from production lots.
4.5
DC Characteristics
—CMOS Compatible—Commercial Products
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
I
LI
Input Leakage Current
1
±1.0
μA
V
CC
= V
CC
Max
V
IN
= V
CC
or V
SS
I
LO
Output Leakage Current
1
±10
μA
V
CC
= V
CC
Max
V
OUT
= V
CC
or V
SS
I
CCS
V
CC
Standby Current
1
50
100
μA
V
CC
= V
CC
Max
CE# = V
CC
±0.2 V
I
CC1
V
CC
Active Read Current
1
10
30
mA
V
CC
= V
CC
Max, CE# = V
IL
f = 6 MHz, I
OUT
= 0 mA
I
CC2
V
CC
Programming Current
1, 2
1.0
10
mA
Programming in Progress
I
CC3
V
CC
Erase Current
1, 2
5.0
15
mA
Erasure in Progress
I
CC4
V
CC
Program Verify
Current
1, 2
5.0
15
mA
V
PP
= V
PPH
Program Verify in Progress
I
CC5
V
CC
Erase Verify Current
1, 2
5.0
15
mA
V
PP
= V
PPH
Erase Verify in Progress
I
PPS
V
PP
Leakage Current
1
±10
μA
V
PP
≤
V
CC
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