參數(shù)資料
型號： TMS28F004AMB70CDBJL
廠商： Texas Instruments, Inc.
英文描述： 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
中文描述： 524288按8-BIT/262144由16位自動選擇啟動塊閃存
文件頁數(shù)： 63/80頁
文件大?。?/td> 1080K
代理商： TMS28F004AMB70CDBJL
TMS28F004Axy, TMS28F400Axy
524288 BY 8-BIT/
262
144 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS829A – JANUARY 1996 – REVISED AUGUST 1997
63
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics for TMS28F004AZy and TMS28F400AZy over recommended ranges of
supply voltage and operating free-air temperature using test conditions given in Table 9 (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
2.4
MAX
UNIT
VOH
High-level dc
output voltage
TTL
VCC = VCC MIN,IOH = – 2.5 mA
VCC = VCC MIN,IOH = – 100
μ
A
VCC = VCC MIN,IOL = 5.8 mA
During read algorithm-selection mode
V
CMOS
VCC – 0.4
VOL
VID
Low-level dc output voltage
0.45
V
A9 selection code voltage
11.4
12.6
V
II
Input current (leakage), except for A9
when A9 = VID (see Note 10)
A9 selection code current
VCC = VCC MAX,
VI = 0 V to VCCMAX, RP = VHH
A9 = VID
RP = VHH
VCC = VCC MAX, VO = 0 V to
VCCMAX
VPP
≤
VCC
±
1
μ
A
IID
IRP
500
μ
A
μ
A
RP boot-block unlock current
500
IO
Output current (leakage)
±
10
μ
A
IPPS
VPP standby current (standby)
VPP supply current (reset/deep
power-down mode)
5-V VCC range
10
μ
A
IPPL
RP = VSS
±
0.2 V, VPP
≤
VCC
5-V VCC range
5
μ
A
IPP1
VPP supply current (active read)
VPP supply current (active byte write)
(see Notes 11 and 12)
VPP
≥
VCC
5-V VCC range
12-V VPP range,
5-V VCC range
12-V VPP range,
5-V VCC range
12-V VPP range,
5-V VCC range
12-V VPP range,
5-V VCC range
200
μ
A
IPP2
Programming in progress
20
mA
IPP3
VPP supply current (active word write)
(see Notes 11 and 12)
Programming in progress
20
mA
IPP4
VPP supply current (block erase)
(see Notes 11 and 12)
Block erase in progress
15
mA
IPP5
VPP supply current (erase suspend)
(see Notes 11 and 12)
Block erase suspended
200
μ
A
ICCS
VCC supply current
(standby)
TTL-input level
VCC = VCC MAX, E = RP = VIH
MAX E
5 V VCCrange
5-V VCC range
2
mA
μ
A
CMOS-input level
130
VCC supply current (reset/deep
power-down mode)
0
°
C to 70
°
C
– 40
°
C to 85
°
C
– 40
°
C to 125
°
C
8
ICCL
RP = VSS
±
0.2 V
8
μ
A
40
ICC1
VCC supply current
(active read)
TTL-input level
E = VIL,
f = 10 MHz, G = VIH
E = VSS, IOUT = 0 mA,
f = 10 MHz, G = VCC
VCC = VCC MAX,
Programming in progress
IOUT = 0 mA,
5-V VCC range
65
mA
CMOS-input level
5-V VCC range
60
mA
ICC2
VCC supply current (active byte write)
(see Notes 11 and 12)
12-V VPP range,
5-V VCC range
12-V VPP range,
5-V VCC range
12-V VPP range,
5-V VCC range
50
mA
ICC3
VCC supply current (active word write)
(see Notes 11 and 12)
VCC = VCC MAX,
Programming in progress
45
mA
ICC4
VCC supply current (block erase)
(see Notes 11 and 12)
VCC = VCC MAX,
Block erase in progress
45
mA
ICC5
VCC supply current (erase suspend)
(see Notes 11 and 12)
VCC = VCC MAX, E = VIH,
Block erase suspended
5-V VCC range
10
mA
NOTES: 10. DQ15/A–1 is tested for output leakage only.
11. Not 100% tested; characterization data available
12. All ac current values are RMS unless otherwise noted.
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