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參數(shù)資料
| 型號(hào)： | TMS28F004AMB70CDBJL |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES |
| 中文描述： | 524288按8-BIT/262144由16位自動(dòng)選擇啟動(dòng)塊閃存 |
| 文件頁(yè)數(shù)： | 52/80頁(yè) |
| 文件大?。?/td> | 1080K |
| 代理商： | TMS28F004AMB70CDBJL |
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TMS28F004Axy, TMS28F400Axy
524288 BY 8-BIT/
262
144 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS829A – JANUARY 1996 – REVISED AUGUST 1997
52
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
TMS28F004AFy and TMS28F400AFy
The TMS28F004AFy and the TMS28F400AFy configurations offer a 5-V memory read with a 5-V or 12-V
program and erase. This configuration is intended for systems using a single 5-V power supply and it is offered
in three temperature ranges: 0
°
C to 70
°
C, – 40
°
C to 85
°
C, and – 40
°
C to 125
°
C.
recommended operating conditions for TMS28F004AFy and TMS28F400AFy
MIN
NOM
MAX
UNIT
VCC
Supply voltage
During write/read/erase/erase suspend
5-V VCC range
VPPL
5-V VPP range
12-V VPP range
TTL
4.5
5
5.5
V
During read only (VPPL)
0
6.5
VPP
Supply voltage
During write/erase/erase suspend
4.5
5
5.5
V
11.4
12
12.6
VIH
High level dc input voltage
High-level dc input voltage
2
VCC + 0.3
VCC + 0.2
0.8
V
CMOS
VCC – 0.2
– 0.3
VIL
Low level dc input voltage
Low-level dc input voltage
TTL
V
CMOS
VSS – 0.2
VSS + 0.2
VLKO
VHH
VPPLK
VCC lock-out voltage from write/erase (see Note 7)
RP unlock voltage
2
V
11.4
12
13
V
VPP lock-out voltage from write/erase
0
1.5
V
L Suffix
0
70
°
C
TA
Operating free-air temperature
E Suffix
Q Suffix
– 40
– 40
85
125
°
C
NOTE 7: Mimimum value at TA = 25
°
C.
word/byte typical write and block-erase performance for TMS28F004AFy and TMS28F400AFy
(see Notes 8 and 9)
PARAMETER
5-V VPP AND
5-V VCC RANGES
MIN
TYP
12-V VPP AND
5-V VCC RANGES
MIN
TYP
MAX
MAX
Main block erase time
1.9
1.1
14
Main block byte-program time
1.4
1.2
4.2
Main block word-program time
0.9
0.6
2.1
Parameter/boot-block erase time
8. Typical values shown are at TA = 25
°
C and nominal conditions.
9. Excludes system-level overhead (all times in seconds)
0.8
0.34
7
NOTES:
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| TMS28F004AMB70CDCDE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| TMS28F004AMB70CDCDL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| TMS28F004AMB80BDBJL | 制造商:TI 制造商全稱:Texas Instruments 功能描述:524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES |
| TMS28F004AMB80BDCDE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| TMS28F004AMB80BDCDL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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