參數(shù)資料
型號： TE28F640P30B85
廠商： INTEL CORP
元件分類： DRAM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁數(shù)： 97/102頁
文件大?。?/td> 1609K
代理商： TE28F640P30B85
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
97
C.5
Intel-Specific Extended Query Table
Table 37.
Primary Vendor-Specific Extended Query
Offset
(1)
P = 10Ah
(P+0)h
(P+1)h
(P+2)h
(P+3)h
(P+4)h
(P+5)h
(P+6)h
(P+7)h
(P+8)h
Length
Description
Hex
(Optional flash features and commands)
Primary extended query table
Unique ASCII string “PRI“
Add. Code Value
10A
--50
10B:
--52
10C:
--49
10D:
--31
10E:
--34
10F:
--E6
110:
--01
111:
--00
112:
--00
bit 0 = 0
bit 1 = 1
bit 2 = 1
bit 3 = 0
bit 4 = 0
bit 5 = 1
bit 6 = 1
bit 7 = 1
bit 8 = 1
bit 9 = 0
bit 10 = 0
bit 30 = 0
bit 31 = 0
113:
--01
3
"P"
"R"
"I"
"1"
"4"
1
1
4
Major version number, ASCII
Minor version number, ASCII
Optional feature and command support (1=yes, 0=no)
bits 10–31 are reserved; undefined bits are “0.” If bit 31 is
“1” then another 31 bit field of Optional features follows at
the end of the bit–30 field.
bit 0 Chip erase supported
bit 1 Suspend erase supported
bit 2 Suspend program supported
bit 3 Legacy lock/unlock supported
bit 4 Queued erase supported
bit 5 Instant individual block locking supported
bit 6 Protection bits supported
bit 7 Pagemode read supported
bit 8 Synchronous read supported
bit 9 Simultaneous operations supported
bit 10 Extended Flash Array Blocks supported
bit 30 CFI Link(s) to follow
bit 31 Another "Optional Features" field to follow
Supported functions after suspend: read Array, Status, Query
Other supported operations are:
bits 1–7 reserved; undefined bits are “0”
No
Yes
Yes
No
No
Yes
Yes
Yes
Yes
No
No
No
No
(P+9)h
1
bit 0 Program supported after erase suspend
Block status register mask
bits 2–15 are Reserved; undefined bits are “0”
bit 0 Block Lock-Bit Status register active
bit 1 Block Lock-Down Bit Status active
bit 4 EFA Block Lock-Bit Status register active
bit 5 EFA Block Lock-Down Bit Status active
V
CC
logic supply highest performance program/erase voltage
bits 0–3 BCD value in 100 mV
bits 4–7 BCD value in volts
V
PP
optimum program/erase supply voltage
bits 0–3 BCD value in 100 mV
bits 4–7 HEX value in volts
bit 0 = 1
114:
115:
bit 0 = 1
bit 1 = 1
bit 4 = 0
bit 5 = 0
116:
Yes
(P+A)h
(P+B)h
2
--03
--00
Yes
Yes
No
No
1.8V
(P+C)h
1
--18
(P+D)h
1
117:
--90
9.0V
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相關代理商/技術參數(shù)
參數(shù)描述
TE28F640P30B85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR)
TE28F640P30T85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
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