參數(shù)資料
型號(hào)： TDA6500TT
廠商： NXP SEMICONDUCTORS
元件分類： 調(diào)諧器
英文描述： 5 V mixer/oscillator and synthesizer for PAL and NTSC standards
中文描述： 3-BAND, VIDEO TUNER, PDSO32
封裝： 6.10 MM, 0.65 MM PITCH, PLASTIC, MO-153, SOT487-1, TSSOP-32
文件頁(yè)數(shù)： 21/37頁(yè)
文件大?。?/td> 223K
代理商： TDA6500TT
9397 750 15057
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 14 June 2005
21 of 37
Philips Semiconductors
TDA6500; TDA6501
5 V mixer/oscillator and synthesizer for PAL and NTSC standards
[1]
Limits are related to the tank circuits used in
Figure 7
for a PAL application. The choice of different external components adapts the
measurement circuit to other frequency bands or NTSC applications.
[2]
The frequency shift is defined as a change in oscillator frequency when the supply voltage varies from V
CC
= 5 V to 4.75 V (4.5 V) or
from V
CC
= 5 V to 5.25 V (5.5 V). The oscillator is free running during this measurement.
The frequency drift is defined as a change in oscillator frequency when the ambient temperature varies from T
amb
= 25
°
C to 50
°
C or
from T
amb
= 25
°
C to 0
°
C. The oscillator is free running during this measurement.
Switch-on drift is defined as the change in oscillator frequency between 5 s and 15 min after switch on. The oscillator is free running
during this measurement.
[3]
[4]
[5]
The supply ripple susceptibility is measured in the circuit according to
Figure 7
using a spectrum analyzer connected to the IF output. An
unmodulated RF signal is applied to the test board RF input. A sinewave signal with a frequency of 500 kHz is superimposed onto the
supply voltage. The amplitude of this ripple signal is adjusted to bring the 500 kHz sidebands around the IF carrier to a level of
53.5 dB
with respect to the carrier.
[1]
This is the level of divider interferences close to the IF. For example channel S3: f
osc
= 158.15 MHz,
1
4
f
osc
= 39.5375 MHz. The LOSCIN
input must be left open (i.e. not connected to any load or cable); the HOSCIN1 and HOSCIN2 inputs are connected to a hybrid.
[2]
Crystal oscillator interference means the 4 MHz sidebands caused by the crystal oscillator. The rejection has to be greater than 60 dB
for an IF output signal of 100 dB
μ
V.
[3]
The reference frequency rejection is the level of reference frequency sidebands (e.g. 62.5 kHz) related to the carrier. The rejection has
to be greater than 60 dB for an IF output signal of 100 dB
μ
V.
Φ
osc
phase noise, carrier-to-noise
sideband
±
10 kHz frequency offset; worst
case in the frequency range
±
100 kHz frequency offset; worst
case in the frequency range
4.75 V < V
CC
< 5.25 V; worst case
in the frequency range; ripple
frequency 500 kHz
84
87
-
dBc/Hz
104
107
-
dBc/Hz
RSC
p-p
ripple susceptibility of V
CC
(peak-to-peak value)
[5]
15
20
-
mV
Table 21:
V
CC
= 5 V; T
amb
= 25
°
C; values are given for an IF amplifier with 500
load (measured as shown in
Figure 7
for the PAL
standard); unless otherwise specified.
Symbol
Parameter
Conditions
Oscillator
…continued
Min
Typ
Max
Unit
Table 22:
V
CC
= 5 V; T
amb
= 25
°
C; values are given for an IF amplifier with 500
load (measured as shown in
Figure 7
for the PAL
standard); unless otherwise specified.
Symbol
Parameter
Conditions
IF amplifier
S
22
output reflection coefficient
magnitude; see
Figure 6
phase; see
Figure 6
Z
o
output impedance (R
S
+ jL
S
ω
) R
S
at 36.15 MHz
C
S
at 36.15 MHz
R
S
at 43.5 MHz
C
S
at 43.5 MHz
Rejection at the IF output
INT
div
level of divider interferences
in the IF signal
INT
XTAL
crystal oscillator interferences
rejection
frequency range
INTf
ref
reference frequency rejection
V
IF
= 100 dB
μ
V; worst case in the
frequency range
IF amplifier
Min
Typ
Max
Unit
-
-
-
-
-
-
38
0.36
79
9
80
3
-
-
-
-
-
-
dB
deg
nF
nF
worst case
[1]
-
-
23
dB
μ
V
V
IF
= 100 dB
μ
V; worst case in the
[2]
60
66
-
dBc
[3]
60
66
-
dBc
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