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參數(shù)資料
| 型號(hào)： | TC55VBM416AFTN55 |
| 廠商： | Toshiba Corporation |
| 英文描述： | CABLE 30 COND RIBBON WHT 100FT |
| 中文描述： | 1,048,576字由16位/ 2097152字的8位全的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 11/14頁 |
| 文件大小： | 204K |
| 代理商： | TC55VBM416AFTN55 |
TC55VBM416AFTN55
2002-08-29 11/14
DATA RETENTION CHARACTERISTICS (
Ta
=
40
°
to 85
°
C
)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
V
DH
Data Retention Supply Voltage
1.5
3.6
V
V
DH
=
3.6 V Ta
=
40~85
°
C
15
Ta
=
40~40
°
C
3
I
DDS2
Standby Current
V
DH
=
3.0 V
Ta
=
40~85
°
C
8
μ
A
t
CDR
Chip Deselect to Data Retention Mode Time
0
ns
t
R
Recovery Time
5
ms
CONTROLLED DATA RETENTION MODE
(See Note 1)
CE2 CONTROLLED DATA RETENTION MODE
(See Note 3)
(See Note 4)
, CONTROLLED DATA RETENTION MODE
V
DD
2.3 V
GND
V
IL
DATA RETENTION MODE
t
R
t
CDR
V
DD
0.2 V
V
IH
CE2
V
DD
2.3 V
GND
V
IH
DATA RETENTION MODE
t
R
(See Note 2)
(See Note 2)
t
CDR
V
DD
V
DD
0.2 V
1
CE
V
DD
2.3 V
GND
V
IH
DATA RETENTION MODE
t
R
(See Note 5)
(See Note 5)
t
CDR
V
DD
V
DD
0.2 V
UB
, LB
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