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參數(shù)資料
| 型號： | TC55VCM216ASTN55 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| 中文描述： | 馬鞍山暫定東芝數(shù)字集成電路硅柵CMOS |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 201K |
| 代理商： | TC55VCM216ASTN55 |
TC55VCM216ASTN40,55
2002-07-04 1/14
TENTATIVE
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC55VCM216ASTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by
16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to
3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of
3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7
μ
A standby
current (at V
DD
=
3 V, Ta
=
25°C, typical) when chip enable (CE1) is asserted high or (CE2) is asserted low. There
are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output
enable (OE ) provides fast memory access. Data byte control pin (LB, UB ) provides lower and upper byte access.
This device is well suited to various microprocessor system applications where high speed, low power and battery
backup are required. And, with a guaranteed operating extreme temperature range of
40° to 85°C, the
TC55VCM216ASTN can be used in environments exhibiting extreme temperature conditions. The
TC55VCM216ASTN is available in a plastic 48-pin thin-small-outline package (TSOP).
FEATURES
Low-power dissipation
Operating: 9 mW/MHz (typical)
Single power supply voltage of 2.3 to 3.6 V
Power down features usingCE1 and CE2
Data retention supply voltage of 1.5 to 3.6 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of
40° to 85°C
Standby Current (maximum):
3.6 V
3.0 V
10
μ
A
5
μ
A
PIN ASSIGNMENT
(TOP VIEW)
PIN NAMES
48 PIN TSOP
A0~A17
1
CE
, CE2
R/W
OE
LB ,
UB
I/O1~I/O16
V
DD
GND
NC
OP*
Address Inputs
Chip Enable
Read/Write Control
Output Enable
Data Byte Control
Data Inputs/Outputs
Power
Ground
No Connection
Option
*: OP pin must be open or connected to GND.
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Name
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
R/W
CE2
OP
UB
LB
NC
Pin No.
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
A17
A7
A6
A5
A4
A3
A2
A1
A0
1
CE
GND
OE
I/O1
I/O9
I/O2 I/O10
Pin No.
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Pin Name
I/O3 I/O11 I/O4 I/O12 V
DD
I/O5 I/O13 I/O6 I/O14 I/O7 I/O15 I/O8 I/O16 GND
NC
A16
Access Times (maximum):
TC55VCM216ASTN
40
55
Access Time
40 ns
55 ns
1
CE
Access Time
40 ns
55 ns
CE2 Access Time
40 ns
55 ns
OE
Access Time
25 ns
30 ns
Package:
TSOP
48-P-1214-0.50
(Weight:0.35 g typ)
(Normal)
25
48
24
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC55VCM216ASTN55(LA) | 制造商:Toshiba America Electronic Components 功能描述: |
| TC55VCM316BSGN55LC | 制造商:Toshiba America Electronic Components 功能描述: |
| TC55VCM316BTGN55LA | 功能描述:IC SRAM 8MBIT 55NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| TC55VCM416BSGN | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM |
| TC55VCM416BTGN | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM |
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