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參數(shù)資料
| 型號(hào)： | STP9N30 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 9A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 300V五（巴西）直| 9A條（?。﹟ TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大?。?/td> | 337K |
| 代理商： | STP9N30 |
9/9
STP9NM60 / STD9NM60 / STD9NM60-1
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| STP9N60M2 | 制造商:STMicroelectronics 功能描述:POWER MOSFET - Rail/Tube 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V 5.5A TO-220 制造商:STMicroelectronics 功能描述:STP9N60M2 Series 600 V 5.5 A 0.78 Ohm N-channel Power MOSFET - TO-220-3 制造商:STMicroelectronics 功能描述:MOSFET N-Ch 600V 5.5A MDmesh II TO-220 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 5.5A TO-220 制造商:STMicroelectronics 功能描述:600V,0.72,5.5A,N-Channel Power MOSFET 制造商:STMicroelectronics 功能描述:N-channel 600V,0.72Ohm,5.5A Power MOSFET |
| STP9N65M2 | 功能描述:MOSFET N-CH 650V 5A TO-220AB 制造商:stmicroelectronics 系列:MDmesh?? 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:650V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:5A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:900 毫歐 @ 2.5A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:4V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:10nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:315pF @ 100V 功率 - 最大值:60W 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 供應(yīng)商器件封裝:TO-220 標(biāo)準(zhǔn)包裝:50 |
| STP9NA50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP9NA50FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP9NB50 | 功能描述:MOSFET RO 512-FQP9N50 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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