- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383841 > STP9N30 TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 9A I(D) | TO-220AB PDF資料下載
參數(shù)資料
| 型號： | STP9N30 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 9A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 300V五（巴西）直| 9A條（?。﹟ TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 337K |
| 代理商： | STP9N30 |
3/9
STP9NM60 / STD9NM60 / STD9NM60-1
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
10
μA
μA
V
GS
= ± 20V
±5
μA
3
4
5
V
V
GS
= 10V, I
D
= 3.5 A
0.55
0.60
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 4.1 A
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
Min.
Typ.
TBD
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
580
160
20
pF
pF
pF
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 4.1 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480 V, I
D
= 8.3 A,
V
GS
= 10 V
Min.
Typ.
TBD
TBD
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
22
TBD
TBD
30
nC
nC
nC
Parameter
Test Conditions
V
DD
= 480 V, I
D
= 8.3 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
Fall Time
Cross-over Time
TBD
TBD
TBD
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
TBD
TBD
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 8.3 A, V
GS
= 0
I
SD
= 8.3 A, di/dt = 100A/μs
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
TBD
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
TBD
TBD
TBD
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 8.3 A, di/dt = 100A/μs
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
TBD
TBD
TBD
ns
μC
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP9NM60 | N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET |
| STDELIV | Resettable Fuse; Operating Voltage Max:30V; Resistance:0.05ohm; Holding Current:4A; Tripping Current:8A; Initial Resistance Min:0.01ohm; Mounting Type:Through Hole; Terminal Type:Radial Leaded; Thermistor Tolerance:+/- 5% |
| STDL130 | STDL130|Data Sheet |
| STDL131 | STDL131|Data Sheet |
| STDL150 | Cartridge Fuse; Current Rating:3A; Fuse Type:Fast Acting; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP9N60M2 | 制造商:STMicroelectronics 功能描述:POWER MOSFET - Rail/Tube 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V 5.5A TO-220 制造商:STMicroelectronics 功能描述:STP9N60M2 Series 600 V 5.5 A 0.78 Ohm N-channel Power MOSFET - TO-220-3 制造商:STMicroelectronics 功能描述:MOSFET N-Ch 600V 5.5A MDmesh II TO-220 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 5.5A TO-220 制造商:STMicroelectronics 功能描述:600V,0.72,5.5A,N-Channel Power MOSFET 制造商:STMicroelectronics 功能描述:N-channel 600V,0.72Ohm,5.5A Power MOSFET |
| STP9N65M2 | 功能描述:MOSFET N-CH 650V 5A TO-220AB 制造商:stmicroelectronics 系列:MDmesh?? 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:650V 電流 - 連續(xù)漏極（Id）（25°C 時）:5A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:900 毫歐 @ 2.5A，10V 不同 Id 時的 Vgs（th）（最大值）:4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:10nC @ 10V 不同 Vds 時的輸入電容（Ciss）:315pF @ 100V 功率 - 最大值:60W 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 供應(yīng)商器件封裝:TO-220 標(biāo)準(zhǔn)包裝:50 |
| STP9NA50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP9NA50FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP9NB50 | 功能描述:MOSFET RO 512-FQP9N50 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。