參數(shù)資料
型號: STM32F103VEH6
廠商: STMICROELECTRONICS
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PBGA100
封裝: 10 X 10 MM, 0.50 MM PITCH, ROHS COMPLIANT, LFBGA-100
文件頁數(shù): 70/115頁
文件大?。?/td> 1225K
代理商: STM32F103VEH6
Electrical characteristics
STM32F103xC, STM32F103xD, STM32F103xE
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
5.3.10
FSMC characteristics
Asynchronous waveforms and timings
Figure 22 through Figure 25 respresent asynchronous waveforms and Table 31 through
Table 34 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
AddressSetupTime = 0
AddressHoldTime = 1
DataSetupTime = 1
AccessMode = FSMC_AccessMode_D
Table 29.
Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1.
Guaranteed by design, not tested in production.
Unit
tprog
16-bit programming time
TA = –40 to +105 °C
40
52.5
70
s
tERASE Page (2 KB) erase time
TA = –40 to +105 °C
20
40
ms
tME
Mass erase time
TA = –40 to +105 °C
20
40
ms
IDD
Supply current
Read mode
fHCLK = 72 MHz with 2 wait
states, VDD = 3.3 V
28
mA
Write mode
fHCLK = 72 MHz, VDD = 3.3 V
7mA
Erase mode
fHCLK = 72 MHz, VDD = 3.3 V
5mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
A
Vprog
Programming voltage
2
3.6
V
Table 30.
Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization not tested in production.
Typ
Max
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2.
Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20
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