參數(shù)資料
型號(hào): STM32F102RBT6TR
廠商: STMICROELECTRONICS
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQFP64
封裝: 10 X 10 MM, 0.50 MM PITCH, ROHS COMPLIANT, LQFP-64
文件頁數(shù): 37/69頁
文件大小: 805K
代理商: STM32F102RBT6TR
Electrical characteristics
STM32F102x8, STM32F102xB
Figure 18.
Typical application with a 32.768 kHz crystal
5.3.7
Internal clock source characteristics
The parameters given in Table 23 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 8.
High-speed internal (HSI) RC oscillator
low-speed internal (LSI) RC oscillator
ai14978b
OSC32_OU T
OSC32_IN
fLSE
CL1
RF
STM32F102xx
32.768 KH z
resonator
Bias
controlled
gain
CL2
Resonator with
integrated capacitors
Table 23.
HSI oscillator characteristics(1)(2)
1.
Guaranteed by design, not tested in production.
2.
VDD = 3.3 V, TA = –40 to 85 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
8
MHz
ACCHSI Accuracy of HSI oscillator
TA = –40 to 85 °C
±1
±3%
TA = –10 to 85 °C
±1
±2.5
%
TA = 0 to 70 °C
±1
±2.2
%
TA = 25 °C
±1
±2%
tsu(HSI)
HSI oscillator startup time
1
2
s
IDD(HSI) HSI oscillator power consumption
80
100
A
Table 24.
LSI oscillator characteristics (1)
1.
VDD = 3 V, TA = 40 to 85 °C unless otherwise specified.
Symbol
Parameter
Min(2)
2.
Based on characterization, not tested in production.
Typ
Max
Unit
fLSI
Frequency
30
40
60
kHz
tsu(LSI)
(3)
3.
Guaranteed by design, not tested in production.
LSI oscillator startup time
85
s
IDD(LSI)
LSI oscillator power consumption
0.65
1.2
A
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