參數(shù)資料
型號: STM32F102R4T6ATR
廠商: STMICROELECTRONICS
元件分類: 微控制器/微處理器
英文描述: RISC MICROCONTROLLER, PQFP64
封裝: 10 X 10 MM, ROHS COMPLIANT, LQFP-64
文件頁數(shù): 39/69頁
文件大小: 809K
代理商: STM32F102R4T6ATR
Electrical characteristics
STM32F102x4, STM32F102x6
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 85 °C unless otherwise specified.
Table 28.
Flash memory endurance and data retention
Table 27.
Flash memory characteristics
Symbol
Parameter
Conditions
Min(1)
1.
Guaranteed by design, not tested in production.
Typ
Max(1)
Unit
tprog
16-bit programming time
TA = –40 to +85 °C
40
52.5
70
s
tERASE
Page (1 KB) erase time
TA = –40 to +85 °C
20
40
ms
tME
Mass erase time
TA = –40 to +85 °C
20
40
ms
IDD
Supply current
Read mode
fHCLK = 48 MHz with 2
wait states, VDD = 3.3 V
20
mA
Write / Erase modes
fHCLK = 48 MHz, VDD =
3.3 V
5mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
A
Vprog
Programming voltage
2
3.6
V
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization not tested in production.
Typ
Max
NEND
Endurance
10
kcycles
tRET
Data retention
TA = 85 °C, 1000 cycles
30
Years
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