參數(shù)資料
型號(hào): STM32F102R4T6ATR
廠商: STMICROELECTRONICS
元件分類: 微控制器/微處理器
英文描述: RISC MICROCONTROLLER, PQFP64
封裝: 10 X 10 MM, ROHS COMPLIANT, LQFP-64
文件頁(yè)數(shù): 26/69頁(yè)
文件大?。?/td> 809K
代理商: STM32F102R4T6ATR
Electrical characteristics
STM32F102x4, STM32F102x6
Table 14.
Maximum current consumption in Sleep mode, code running from Flash or RAM
Symbol
Parameter
Conditions
fHCLK
Max(1)
Unit
TA = 85 °C
IDD
Supply current in
Sleep mode
External clock(2) all
peripherals enabled
48 MHz
17
mA
36 MHz
14
24 MHz
10
16 MHz
7
8 MHz
4
External clock(2), all
peripherals disabled
48 MHz
6
36 MHz
5
24 MHz
4.5
16 MHz
4
8 MHz
3
1.
Based on characterization, tested in production at VDD max, fHCLK max.
2.
External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
Table 15.
Typical and maximum current consumptions in Stop and Standby modes
Symbol
Parameter
Conditions
Typ(1)
Max
Unit
VDD/ VBAT
= 2.4 V
VDD/VBAT
= 3.3 V
TA =
85 °C
IDD
Supply current
in Stop mode
Regulator in Run mode,
Low-speed and high-speed internal RC
oscillators and high-speed oscillator OFF (no
independent watchdog)
21.3
21.7
160
A
Regulator in Low Power mode,
Low-speed and high-speed internal RC
oscillators and high-speed oscillator OFF (no
independent watchdog)
11.3
11.7
145
Supply current
in Standby
mode(2)
Low-speed internal RC oscillator and
independent watchdog ON
2.75
3.4
-
Low-speed internal RC oscillator ON,
independent watchdog OFF
2.55
3.2
-
Low-speed internal RC oscillator and
independent watchdog OFF, low-speed
oscillator and RTC OFF
1.55
1.9
3.2
IDD_VBAT
Backup domain
supply current
Low-speed oscillator and RTC ON
1.1
1.4
1.9(3)
1.
Typical values are measured at TA = 25 °C.
2.
To have the Standby consumption with RTC ON, add IDD_VBAT (Low-speed oscillator and RTC ON) to IDD Standby (when
VDD is present the Backup Domain is powered by VDD supply).
3.
Based on characterization, not rested in production.
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