參數(shù)資料
型號: STGP3NB60M
英文描述: N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT
中文描述: N溝道600V的IGBT的第3A TO-220/DPAK POWERMESH
文件頁數(shù): 10/10頁
文件大?。?/td> 502K
代理商: STGP3NB60M
STGD3NB60HD
10/10
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGP3NB60MD 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT
STGP3NB60S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT
STGP3NC120HD 功能描述:IGBT 晶體管 7A 1200 V Very Fast IGBT Power Bipolar RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGP40V60F 制造商:STMicroelectronics 功能描述:IGBT & POWER BIPOLAR - Rail/Tube 制造商:STMicroelectronics 功能描述:600 V, 40 A very high speed trench gate field-stop IGBT, TO-220 制造商:STMicroelectronics 功能描述:IGBT & Power Bipolar
STGP4M65DF2 功能描述:IGBT M SERIES 650V 4A LOW LOSS 制造商:stmicroelectronics 系列:M 零件狀態(tài):在售 IGBT 類型:溝槽型場截止 電壓 - 集射極擊穿(最大值):650V 電流 - 集電極(Ic)(最大值):8A 脈沖電流 - 集電極 (Icm):16A 不同?Vge,Ic 時的?Vce(on):2.1V @ 15V,4A 功率 - 最大值:68W 開關(guān)能量:40μJ(開),136μJ(關(guān)) 輸入類型:標準 柵極電荷:15.2nC 25°C 時 Td(開/關(guān))值:12ns/86ns 測試條件:400V,4A,47 歐姆,15V 反向恢復(fù)時間(trr):133ns 工作溫度:-55°C ~ 175°C(TJ) 安裝類型:通孔 封裝/外殼:TO-220-3 供應(yīng)商器件封裝:TO-220AB 標準包裝:50