參數(shù)資料
型號： STGD3NB60MT4
英文描述： Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:100pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
中文描述： N溝道600V的IGBT的第3A TO-220/DPAK POWERMESH
文件頁數(shù)： 3/10頁
文件大?。?/td> 502K
代理商： STGD3NB60MT4
3/10
STGD3NB60HD
ELECTRICAL CHARACTERISTICS
(CONTINUED)
DYNAMIC
Symbol
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
COLLECTOR-EMITTER DIODE
Symbol
I
f
I
fm
Forward Current pulsed
V
f
Forward On-Voltage
Parameter
Test Conditions
V
CE
= 25 V
,
I
C
=3 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
Min.
Typ.
Max.
Unit
g
fs
C
ies
C
oes
C
res
Forward Transconductance
2.4
S
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
235
33
6.6
pF
pF
pF
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 3 A,
V
GE
= 15V
21
6
7.6
27
nC
nC
nC
Latching Current
V
clamp
= 480 V
,
Tj = 125°C
R
G
= 10
12
A
Parameter
Test Conditions
V
CC
= 480 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15 V
V
CC
= 480 V, I
C
= 3 A R
G
=10
V
GE
= 15 V,Tj = 125°C
Min.
Typ.
Max.
Unit
Turn-on Delay Time
Rise Time
5
11
ns
ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
400
77
A/μs
μJ
Parameter
Test Conditions
V
cc
= 480 V, I
C
=3 A,
R
GE
= 10
, V
GE
= 15 V
Min.
Typ.
Max.
Unit
Cross-over Time
76
ns
Off Voltage Rise Time
36
ns
Delay Time
53
ns
Fall Time
77
ns
μ
J
μ
J
ns
E
off
(**)
Turn-off Switching Loss
33
E
ts
Total Switching Loss
100
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 3 A,
R
GE
= 10
, V
GE
= 15 V
Tj = 125 °C
180
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
Off Voltage Rise Time
82
ns
Delay Time
58
ns
Fall Time
110
ns
μ
J
μ
J
Turn-off Switching Loss
88
E
ts
Total Switching Loss
165
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward Current
1.5
12
A
A
I
f
= 1.5 A
I
f
= 1.5 A, Tj = 125 °C
I
f
= 1.5 A ,V
R
= 400 V,
Tj =125°C, di/dt = 100 A/
μ
s
1.6
1.3
2.1
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
95
110
2.7
ns
nC
A
相關PDF資料
PDF描述
STGP3NB60M N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT
STGP10N50A Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:DO-214AA; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA
STH221 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:170V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
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相關代理商/技術參數(shù)
參數(shù)描述
STGD3NB60S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT
STGD3NB60SD 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT
STGD3NB60SD_04 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT
STGD3NB60SD-1 功能描述:IGBT 晶體管 N Ch 3A 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD3NB60SDT4 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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