參數(shù)資料
型號(hào): STGD3NB60KD
英文描述: SIDACTOR - TECCOR P0640SC MC
中文描述: N溝道6A條- 600V的DPAK封裝短路IGBT的證明POWERMESH
文件頁(yè)數(shù): 9/10頁(yè)
文件大?。?/td> 502K
代理商: STGD3NB60KD
9/10
STGD3NB60HD
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
DPAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
330
MIN.
MAX.
12.992
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
0.504
0.795
0.645
1.968
13.2
0.520
18.4
0.724
22.4
0.881
BASE QTY
2500
BULK QTY
2500
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
6.8
10.4
MAX.
7
10.6
12.1
1.6
MIN.
0.267
0.409
MAX.
0.275
0.417
0.476
0.063
A0
B0
B1
D
D1
E
F
K0
P0
P1
P2
R
W
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
15.7
0.059
0.059
0.065
0.291
0.100
0.153
0.311
0.075
1.574
0.618
1.85
7.6
2.75
4.1
8.1
2.1
0.073
0.299
0.108
0.161
0.319
0.082
16.3
0.641
TAPE MECHANICAL DATA
All dimensions
are in millimeters
All dimensions are in millimeters
相關(guān)PDF資料
PDF描述
STGD3NB60M 58V SURGECTOR, DO-214AA
STGD3NB60MT4 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:100pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
STGP3NB60M N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT
STGP10N50A Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:DO-214AA; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA
STH221 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:170V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGD3NB60KT4 制造商:STMicroelectronics 功能描述:
STGD3NB60M 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT
STGD3NB60MT4 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD3NB60S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT
STGD3NB60SD 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT