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參數(shù)資料
| 型號： | STGD3NB60KD |
| 英文描述： | SIDACTOR - TECCOR P0640SC MC |
| 中文描述： | N溝道6A條- 600V的DPAK封裝短路IGBT的證明POWERMESH |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 502K |
| 代理商： | STGD3NB60KD |
STGD3NB60HD
10/10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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相關PDF資料 |
PDF描述 |
|---|---|
| STGD3NB60M | 58V SURGECTOR, DO-214AA |
| STGD3NB60MT4 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:100pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V |
| STGP3NB60M | N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT |
| STGP10N50A | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:DO-214AA; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA |
| STH221 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:170V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STGD3NB60KT4 | 制造商:STMicroelectronics 功能描述: |
| STGD3NB60M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT |
| STGD3NB60MT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD3NB60S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT |
| STGD3NB60SD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT |
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