- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383841 > STGD3NB60HDT4 N-CHANNEL 3A 600V DPAK POWERMESH IGBT PDF資料下載
參數(shù)資料
| 型號： | STGD3NB60HDT4 |
| 英文描述： | N-CHANNEL 3A 600V DPAK POWERMESH IGBT |
| 中文描述： | N溝道3A條600V的IGBT的DPAK封裝POWERMESH |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 502K |
| 代理商： | STGD3NB60HDT4 |
3/10
STGD3NB60HD
ELECTRICAL CHARACTERISTICS
(CONTINUED)
DYNAMIC
Symbol
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
COLLECTOR-EMITTER DIODE
Symbol
I
f
I
fm
Forward Current pulsed
V
f
Forward On-Voltage
Parameter
Test Conditions
V
CE
= 25 V
,
I
C
=3 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
Min.
Typ.
Max.
Unit
g
fs
C
ies
C
oes
C
res
Forward Transconductance
2.4
S
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
235
33
6.6
pF
pF
pF
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 3 A,
V
GE
= 15V
21
6
7.6
27
nC
nC
nC
Latching Current
V
clamp
= 480 V
,
Tj = 125°C
R
G
= 10
12
A
Parameter
Test Conditions
V
CC
= 480 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15 V
V
CC
= 480 V, I
C
= 3 A R
G
=10
V
GE
= 15 V,Tj = 125°C
Min.
Typ.
Max.
Unit
Turn-on Delay Time
Rise Time
5
11
ns
ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
400
77
A/μs
μJ
Parameter
Test Conditions
V
cc
= 480 V, I
C
=3 A,
R
GE
= 10
, V
GE
= 15 V
Min.
Typ.
Max.
Unit
Cross-over Time
76
ns
Off Voltage Rise Time
36
ns
Delay Time
53
ns
Fall Time
77
ns
μ
J
μ
J
ns
E
off
(**)
Turn-off Switching Loss
33
E
ts
Total Switching Loss
100
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 3 A,
R
GE
= 10
, V
GE
= 15 V
Tj = 125 °C
180
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
Off Voltage Rise Time
82
ns
Delay Time
58
ns
Fall Time
110
ns
μ
J
μ
J
Turn-off Switching Loss
88
E
ts
Total Switching Loss
165
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward Current
1.5
12
A
A
I
f
= 1.5 A
I
f
= 1.5 A, Tj = 125 °C
I
f
= 1.5 A ,V
R
= 400 V,
Tj =125°C, di/dt = 100 A/
μ
s
1.6
1.3
2.1
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
95
110
2.7
ns
nC
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGD3NB60HT4 | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):No; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:50pF; Holding Current:150mA RoHS Compliant: No |
| STGD3NB60KD | SIDACTOR - TECCOR P0640SC MC |
| STGD3NB60M | 58V SURGECTOR, DO-214AA |
| STGD3NB60MT4 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:100pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V |
| STGP3NB60M | N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGD3NB60HT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 6A I(C) | TO-252AA |
| STGD3NB60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD3NB60KD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 6A - 600V DPAK SHORT CIRCUIT PROOF POWERMESH IGBT |
| STGD3NB60KT4 | 制造商:STMicroelectronics 功能描述: |
| STGD3NB60M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。