參數(shù)資料
型號(hào)： STGD3NB60HD
英文描述： N-CHANNEL 3A 600V DPAK POWERMESH IGBT
中文描述： N溝道3A條600V的IGBT的DPAK封裝POWERMESH
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 502K
代理商： STGD3NB60HD
STGD3NB60HD
2/10
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
ECR
Emitter-Collector Voltage
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuous) at T
C
= 25°C
I
C
Collector Current (continuous) at T
C
= 100°C
I
CM
( )
Collector Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
T
stg
Storage Temperature
T
j
Operating Junction Temperature
( )
Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Rthj-amb
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 125 °C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
ON (1)
Symbol
V
GE(th)
V
CE(sat)
Parameter
Value
Unit
600
V
20
V
± 20
V
10
A
6
A
24
A
50
W
0.4
W/°C
–55 to 150
°C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.5
100
°C/W
°C/W
Test Conditions
I
C
= 250 μA, V
GE
= 0
Min.
600
Typ.
Max.
Unit
V
V
CE
= Max Rating, T
C
= 25 °C
50
μA
100
μA
V
GE
= ±20V , V
CE
= 0
±100
nA
Parameter
Test Conditions
V
CE
= V
GE
, I
C
= 250μA
V
GE
= 15V, I
C
= 3 A
V
GE
= 15V, I
C
= 3 A, Tj =125°C
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
5
V
Collector-Emitter Saturation
Voltage
2.4
2.8
V
1.9
V
相關(guān)PDF資料
PDF描述
STGD3NB60HDT4 N-CHANNEL 3A 600V DPAK POWERMESH IGBT
STGD3NB60HT4 Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):No; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:50pF; Holding Current:150mA RoHS Compliant: No
STGD3NB60KD SIDACTOR - TECCOR P0640SC MC
STGD3NB60M 58V SURGECTOR, DO-214AA
STGD3NB60MT4 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:100pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGD3NB60HDT4 功能描述:IGBT 600V 10A 50W DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:PowerMESH™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
STGD3NB60HT4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 6A I(C) | TO-252AA
STGD3NB60K 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT
STGD3NB60KD 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 6A - 600V DPAK SHORT CIRCUIT PROOF POWERMESH IGBT
STGD3NB60KT4 制造商:STMicroelectronics 功能描述:
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