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參數(shù)資料
| 型號： | STGD3NB60HD |
| 英文描述： | N-CHANNEL 3A 600V DPAK POWERMESH IGBT |
| 中文描述： | N溝道3A條600V的IGBT的DPAK封裝POWERMESH |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 502K |
| 代理商： | STGD3NB60HD |
STGD3NB60HD
10/10
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its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
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相關PDF資料 |
PDF描述 |
|---|---|
| STGD3NB60HDT4 | N-CHANNEL 3A 600V DPAK POWERMESH IGBT |
| STGD3NB60HT4 | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):No; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:50pF; Holding Current:150mA RoHS Compliant: No |
| STGD3NB60KD | SIDACTOR - TECCOR P0640SC MC |
| STGD3NB60M | 58V SURGECTOR, DO-214AA |
| STGD3NB60MT4 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:100pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STGD3NB60HDT4 | 功能描述:IGBT 600V 10A 50W DPAK RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:PowerMESH™ 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| STGD3NB60HT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 6A I(C) | TO-252AA |
| STGD3NB60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD3NB60KD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 6A - 600V DPAK SHORT CIRCUIT PROOF POWERMESH IGBT |
| STGD3NB60KT4 | 制造商:STMicroelectronics 功能描述: |
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