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參數(shù)資料
| 型號： | SSD2008A |
| 英文描述： | TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 30V V(BR)DSS | 3.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|一對|互補| 30V的五（巴西）直| 3.5AI（四）|蘇 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 301K |
| 代理商： | SSD2008A |
Dual P-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
℃
unless otherwise specified)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
②
Forward Transconductance
②
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
g
fs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V
nA
nA
μ
A
S
ns
nC
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
V
DS
= 5V ,I
D
=250
μ
A
V
GS
=20V
V
GS
=-20V
V
DS
=24V
V
DS
=15V,T
C
=70
℃
V
DS
=5V ,V
GS
=10V
V
GS
=10V,I
D
=3.5A
V
GS
=4.5V,I
D
=2.5A
V
DS
=15V,I
D
=3.5A
V
DD
=10V,I
D
=1.0A,
R
0
=6.0
,
②③
V
DS
=10V,V
GS
=10V,
I
D
=3.5A
②③
Drain-to-Source Leakage Current
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
(Body Diode)
Diode Forward Voltage
②
Reverse Recovery Time
②
I
S
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
A
V
ns
Modified MOSFET Symbol
Showing the Integral Reverse
P-N Junction Rectifier
I
DON
On-State Drain-Source Current
A
V
SD
t
rr
T
A
=25
℃
,I
S
=1.7A,V
GS
=0V
T
A
=25
℃
,I
F
=3.5A,di
F
/dt=100A/
μ
s
( N-Channel )
─
│
○
─
┘
─
G
─
│
│
│
│
│
│
SSD2008A
30
1.0
--
--
--
--
14
--
--
--
--
--
--
--
--
--
0.031
0.042
8.0
16
18
38
24
18
3.5
3.5
--
--
100
-100
1.0
5.0
--
0.05
0.08
--
30
40
50
50
35
--
--
--
--
70
1.7
1.2
120
▲
─
│
─│
○
○
D
S
│
Notes ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle
≤
2%
③
Essentially Independent of Operating Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSD2008ATF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSD2009 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-CHANNEL POWER MOSFET |
| SSD2009A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-CHANNEL POWER MOSFET |
| SSD2009ATF | 功能描述:MOSFET N-Ch/50V/3a 0.13Ohm@VGS=10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSD2010TF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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