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參數(shù)資料
| 型號(hào)： | S71GL064A80BFW0B2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| 中文描述： | 堆疊式多芯片產(chǎn)品（MCP）的閃存和RAM |
| 文件頁(yè)數(shù)： | 86/102頁(yè) |
| 文件大小： | 1606K |
| 代理商： | S71GL064A80BFW0B2 |
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86
S71GL032A Based MCPs
S71GL032A_00_A0 March 31, 2005
A d v a n c e I n f o r m a t i o n
Notes:
1.
2.
High-Z and Low-Z parameters are characterized and are not 100% tested.
The internal write time of the memory is defined by the overlap of WE#, CE#1 = V
IL
, CE2 = V
IH
, B
HE
and/or B
LE
= V
IL
. All
signals must be Active to initiate a write and any of these signals can terminate a write by going Inactive. The data input set-
up and hold timing should be referenced to the edge of the signal that terminates write.
3.
Data I/O is high impedance if OE#
≥
V
IH
.
4.
If Chip Enable goes Inactive simultaneously with WE# = High, the output remains in a high-impedance state.
5.
During the Don’t Care period in the Data I/O waveform, the I/Os are in output state and input signals should not be applied.
Figure 28. Write Cycle 1 (WE# Controlled)
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| S71GL064A80BFW0B3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
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