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參數(shù)資料
| 型號： | S29GL128P11TAI010 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 110 ns, PDSO56 |
| 封裝： | 20 X 14 MM, MO-142EC, TSOP-56 |
| 文件頁數(shù)： | 27/77頁 |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL128P11TAI010 |
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November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
27
D a t a
S h e e t
( P r e l i m i n a r y )
The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume
commands. Upon successful completion of the Write Buffer Programming operation, the device returns to
READ mode.
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:
Load a value that is greater than the page buffer size during the “Number of Locations to Program” step.
Write to an address in a sector different than the one specified during the Write-Buffer-Load command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address”
during the “write buffer data loading” stage of the operation.
Writing anything other than the
Program to Buffer Flash
Command after the specified number of “data
load” cycles.
The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “l(fā)ast address location loaded”), DQ6 =
TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. A “Write-to-
Buffer-Abort reset” command sequence is required when using the write buffer Programming features in
Unlock Bypass mode. Note that the Secured Silicon sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices
are capable of handling multiple write buffer programming operations on the same write buffer address range
without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed.
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PDF描述 |
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| S29GL128P11TAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11TAIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11TAIR12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11TAIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11TAIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P11TAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays |
| S29GL128P11TAIV20 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays |
| S29GL128P11TFI010 | 功能描述:閃存 128Mb 3V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P11TFI010 | 制造商:Spansion 功能描述:Mirrorbit Flash Memory IC |
| S29GL128P11TFI020 | 功能描述:閃存 128Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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