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參數(shù)資料
| 型號： | S29GL128P11FFIV10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁數(shù)： | 46/77頁 |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL128P11FFIV10 |
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46
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
5. There is no means to verify what the password is after it is set.
6. The Password Mode Lock Bit, once set, prevents reading the 64-bit password on the data bus and
further password programming.
7. The Password Mode Lock Bit is not erasable.
8. The lower two address bits (A1–A0) are valid during the Password Read, Password Program, and
Password Unlock.
9. The exact password must be entered in order for the unlocking function to occur.
10.The Password Unlock command cannot be issued any faster than 1 μs at a time to prevent a
hacker from running through all the 64-bit combinations in an attempt to correctly match a
password.
11.Approximately 1 μs is required for unlocking the device after the valid 64-bit password is given to
the device.
12.Password verification is only allowed during the password programming operation.
13.All further commands to the password region are disabled and all operations are ignored.
14.If the password is lost after setting the Password Mode Lock Bit, there is no way to clear the PPB
Lock Bit.
15.Entry command sequence must be issued prior to any of any operation and it disables reads and
writes for Sector 0. Reads and writes for other sectors excluding Sector 0 are allowed.
16.If the user attempts to program or erase a protected sector, the device ignores the command and
returns to read mode.
17.A program or erase command to a protected sector enables status polling and returns to read
mode without having modified the contents of the protected sector.
18.The programming of the DYB, PPB, and PPB Lock for a given sector can be verified by writing
individual status read commands DYB Status, PPB Status, and PPB Lock Status to the device.
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PDF描述 |
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| S29GL128P11FFIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11TAI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11TAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11TAIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11TAIR12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P11FFIV20 | 功能描述:閃存 128MB 2.7-3.6V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P11FFIV22 | 制造商:Spansion 功能描述:IC MEMORY-ROM.FLASH 128M BGA64 - Trays |
| S29GL128P11TAI010 | 制造商:Spansion 功能描述:S29GL128P11TAI010 - Trays |
| S29GL128P11TAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays |
| S29GL128P11TAIV20 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays |
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