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參數(shù)資料
| 型號(hào)： | S29GL128P11FFIV10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁(yè)數(shù)： | 44/77頁(yè) |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL128P11FFIV10 |
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44
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
8. There are no means for individually erasing a specific PPB and no specific sector address is
required for this operation.
9. Exit command must be issued after the execution which resets the device to read mode and re-
enables reads and writes for Sector 0.
10.The programming state of the PPB for a given sector can be verified by writing a PPB Status Read
Command to the device as described by the flow chart shown in
Figure 8.2
.
Figure 8.2
PPB Program Algorithm
Re
a
d Byte Twice
Addr =
S
A0
Enter PPB
Comm
a
nd
S
et.
Addr = BA
Progr
a
m PPB Bit.
Addr =
S
A
DQ5 = 1
Ye
s
Ye
s
Ye
s
No
No
No
Ye
s
DQ6 =
Toggle
DQ6 =
Toggle
Re
a
d Byte.
Addr =
S
A
PA
SS
FAIL
I
ssu
e Re
s
et
Comm
a
nd
Exit PPB
Comm
a
nd
S
et
DQ0 =
'0' (Pgm.)
Re
a
d Byte Twice
Addr =
S
A0
No
W
a
it 500
μs
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|---|---|
| S29GL128P11FFIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11TAI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11TAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11TAIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11TAIR12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P11FFIV20 | 功能描述:閃存 128MB 2.7-3.6V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P11FFIV22 | 制造商:Spansion 功能描述:IC MEMORY-ROM.FLASH 128M BGA64 - Trays |
| S29GL128P11TAI010 | 制造商:Spansion 功能描述:S29GL128P11TAI010 - Trays |
| S29GL128P11TAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays |
| S29GL128P11TAIV20 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays |
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