參數(shù)資料
型號: S29GL128P11FFIV10
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述: 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
封裝: 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
文件頁數(shù): 29/77頁
文件大?。?/td> 2121K
代理商: S29GL128P11FFIV10
November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
29
D a t a
S h e e t
( P r e l i m i n a r y )
Figure 7.2
Write Buffer Programming Operation
Write Unlock Cycle
s
:
Addre
ss
555h, D
a
t
a
AAh
Addre
ss
2AAh, D
a
t
a
55h
I
ssu
e
Write B
u
ffer Lo
a
d Comm
a
nd:
Addre
ss
S
A, D
a
t
a
25h
Lo
a
d Word Co
u
nt to Progr
a
m
Progr
a
m D
a
t
a
to Addre
ss
:
S
A, wc
Unlock Cycle 1
Unlock Cycle 2
wc = n
u
m
b
er of word
s
– 1
Ye
s
Ye
s
Ye
s
Ye
s
Ye
s
No
No
No
No
No
wc = 0
Write B
u
ffer
A
b
ort De
s
ired
Write B
u
ffer
A
b
ort
Polling
S
t
a
t
us
= Done
Error
FAIL. I
ssu
e re
s
et comm
a
nd
to ret
u
rn to re
a
d
a
rr
a
y mode.
Write to
a
Different
S
ector Addre
ss
to C
aus
e
Write B
u
ffer A
b
ort
PA
SS
. Device i
s
in
re
a
d mode.
Confirm comm
a
nd:
S
A = 0x29h
Perform Polling Algorithm
(
s
ee Write Oper
a
tion
S
t
a
t
us
flowch
a
rt)
Write Next Word,
Decrement wc:
wc = wc
– 1
RE
S
ET. I
ssu
e Write B
u
ffer
A
b
ort Re
s
et Comm
a
nd
相關(guān)PDF資料
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S29GL128P11FFIV12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11TAI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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