參數(shù)資料
型號: S29GL128M90TFIR10
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
封裝: LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù): 15/160頁
文件大?。?/td> 2142K
代理商: S29GL128M90TFIR10
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
15
P r e l i m i n a r y
Connection Diagrams
Special Package Handling Instructions
Special handling is required for Flash Memory products in molded packages (TSOP and BGA). The
package and/or data integrity may be compromised if the package body is exposed to temperatures
above 150
°
C for prolonged periods of time.
A1
B1
C1
D1
E1
F1
G1
H1
V
SS
A2
B2
C2
D2
E2
F2
G2
H2
A3
B3
C3
D3
E3
F3
G3
H3
A4
B4
C4
D4
E4
F4
G4
V
CC
H4
A5
B5
C5
D5
E5
F5
G5
H5
A6
B6
C6
D6
E6
F6
G6
H6
DQ15/A-1
V
SS
BYTE#
A16
A15
A14
A12
A13
DQ13
DQ6
DQ14
DQ7
A11
A10
A8
A
9
DQ4
DQ12
DQ5
A1
9
NC
RESET#
WE#
DQ11
DQ3
DQ10
DQ2
A20
A18
WP#/ACC
RY/BY#
DQ
9
DQ1
DQ8
DQ0
A5
A6
A17
A7
OE#
CE#
A0
A1
A2
A4
A3
48-ball Fine-pitch BGA
Top View, Balls Facing Down
相關(guān)PDF資料
PDF描述
S29GL128M90TFIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TFIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TFIR23 MOSFET, Switching; VDSS (V): 100; ID (A): 4; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.12; RDS (ON) typ. (ohm) @4V[4.5V]: 0.15; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 420; toff (µs) typ: 0.11; Package: SOP-8
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