參數(shù)資料
型號： S29GL128M90TFIR10
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述： 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
封裝： LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù)： 143/160頁
文件大小： 2142K
代理商： S29GL128M90TFIR10
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
143
P r e l i m i n a r y
Erase And Programming Performance
Notes:
1.
2.
3.
4.
5.
6.
7.
Typical program and erase times assume the following conditions: 25
°
C, V
CC
= 3.0V, 10,000 cycles; checkerboard data pattern.
Under worst case conditions of 90
°
C; Worst case V
CC
, 100,000 cycles.
Effective programming time (typ) is 15
μ
s (per word), 7.5
μ
s (per byte).
Effective accelerated programming time (typ) is 12.5
μ
s (per word), 6.3
μ
s (per byte).
Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables 31 and 32 for
further information on command definitions.
Parameter
Typ (Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes
00h
programm
ing prior to
erasure
Note (6)
Chip Erase Time
S29GL032M
32
64
sec
S29GL064M
64
128
S29GL128M
128
256
S29GL256M
256
512
Total Write Buffer Program Time Notes (3), (5)
240
μs
Excludes
system
level
overhead
Note (7)
Total Accelerated Effective Write Buffer Program Time Notes (4),
(5)
200
μs
Chip Program Time
S29GL032M
31.5
sec
S29GL064M
63
S29GL128M
126
S29GL256M
252
相關(guān)PDF資料
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S29GL128M90TFIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TFIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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S29GL128M90TFIR23 MOSFET, Switching; VDSS (V): 100; ID (A): 4; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.12; RDS (ON) typ. (ohm) @4V[4.5V]: 0.15; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 420; toff (µs) typ: 0.11; Package: SOP-8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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