參數(shù)資料
型號: S29GL128M90TFIR10
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
封裝: LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù): 14/160頁
文件大小: 2142K
代理商: S29GL128M90TFIR10
14
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Connection Diagrams
For S29GL064M (model R0) only.
Special Package Handling Instructions
Special handling is required for Flash Memory products in molded packages (TSOP and BGA). The
package and/or data integrity may be compromised if the package body is exposed to temperatures
above 150°C for prolonged periods of time.
C2
D2
C3
D3
E2
E3
F2
F3
G2
G3
H2
H3
J2
J3
K2
A3
A4
A2
A1
A0
CE#
OE#
V
SS
A7
A18
A6
A5
DQ0
NC
NC
DQ1
RY/BY#
ACC
NC
NC
DQ2
DQ3
V
IO
A21
WE#
RESET#
A22
NC
DQ5
NC
V
CC
DQ4
A
9
A8
A11
A12
A1
9
A10
DQ6
DQ7
A14
A13
A15
A16
A17
NC
A20
V
SS
C4
D4
E4
A1
B1
A2
NC*
NC*
NC*
F4
G4
H4
J4
K4
C5
D5
E5
F5
G5
H5
J5
K5
C6
D6
E6
F6
G6
H6
J6
K6
C7
D7
E7
NC*
NC*
NC*
NC*
A7
B7
A8
B8
F7
G7
H7
J7
K7
NC*
NC*
NC*
NC*
L7
M7
L8
M8
K3
L1
L2
M1
NC*
NC*
NC*
NC*
M2
* Balls are shorted together via the substrate but not connected to the die.
63-Ball Fine-Pitch BGA
Top View, Balls Facing Down
相關PDF資料
PDF描述
S29GL128M90TFIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TFIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TFIR23 MOSFET, Switching; VDSS (V): 100; ID (A): 4; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.12; RDS (ON) typ. (ohm) @4V[4.5V]: 0.15; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 420; toff (µs) typ: 0.11; Package: SOP-8
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