參數(shù)資料
型號: S29GL128M90FFIR22
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 8M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝: 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數(shù): 37/160頁
文件大?。?/td> 2142K
代理商: S29GL128M90FFIR22
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
37
P r e l i m i n a r y
SA36
100100xxx
64/32
240000h–24FFFFh
120000h–127FFFh
SA37
100101xxx
64/32
250000h–25FFFFh
128000h–12FFFFh
SA38
100110xxx
64/32
260000h–26FFFFh
130000h–137FFFh
SA39
100111xxx
64/32
270000h–27FFFFh
138000h–13FFFFh
SA40
101000xxx
64/32
280000h–28FFFFh
140000h–147FFFh
SA41
101001xxx
64/32
290000h–29FFFFh
148000h–14FFFFh
SA42
101010xxx
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA43
101011xxx
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA44
101100xxx
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA45
101101xxx
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
SA46
101110xxx
64/32
2E0000h–2EFFFFh
170000h–177FFFh
SA47
101111xxx
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
SA48
110000xxx
64/32
300000h–30FFFFh
180000h–187FFFh
SA49
110001xxx
64/32
310000h–31FFFFh
188000h–18FFFFh
SA50
110010xxx
64/32
320000h–32FFFFh
190000h–197FFFh
SA51
110011xxx
64/32
330000h–33FFFFh
198000h–19FFFFh
SA52
100100xxx
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
SA53
110101xxx
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA54
110110xxx
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA55
110111xxx
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA56
111000xxx
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA57
111001xxx
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA58
111010xxx
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA59
111011xxx
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA60
111100xxx
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA61
111101xxx
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
SA62
111110xxx
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
SA63
111111000
8/4
3F0000h–3F1FFFh
1F8000h–1F8FFFh
SA64
111111001
8/4
3F2000h–3F3FFFh
1F9000h–1F9FFFh
SA65
111111010
8/4
3F4000h–3F5FFFh
1FA000h–1FAFFFh
SA66
111111011
8/4
3F6000h–3F7FFFh
1FB000h–1FBFFFh
SA67
111111100
8/4
3F8000h–3F9FFFh
1FC000h–1FCFFFh
SA68
111111101
8/4
3FA000h–3FBFFFh
1FD000h–1FDFFFh
SA69
111111110
8/4
3FC000h–3FDFFFh
1FE000h–1FEFFFh
SA70
111111111
8/4
3FE000h–3FFFFFh
1FF000h–1FFFFFh
Table 4. S29GL032M (Model R3) Top Boot Sector Architecture (Continued)
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
相關(guān)PDF資料
PDF描述
S29GL128M90FFIR23 MOSFET, Switching; VDSS (V): -60; ID (A): -6; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.04; RDS (ON) typ. (ohm) @4V[4.5V]: [0.06]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2300; toff (µs) typ: 0.055; Package: SOP-8
S29GL128M90FFIR80 MOSFET, Switching; VDSS (V): -60; ID (A): -6; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.04; RDS (ON) typ. (ohm) @4V[4.5V]: [0.06]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2300; toff (µs) typ: 0.055; Package: SOP-8
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S29GL128M90FFIR83 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TAIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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