參數(shù)資料
型號: S29GL128M90FFIR22
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 8M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝: 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數(shù): 157/160頁
文件大?。?/td> 2142K
代理商: S29GL128M90FFIR22
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
157
P r e l i m i n a r y
Physical Dimensions
BGA-48P-M20
8.00
±
0.20(.315
±
.008)
0.38
±
0.10(.015
±
.004)
(Stand off)
(Mounting height)
6.00
±
0.20
(.236
±
.008)
0.10(.004)
0.80(.031)TYP
5.60(.220)
4.00(.157)
48-0.45
±
0.05
(48-.018
±
.002)
M
0.08(.003)
H
G
F
E
D
C
B
A
6
5
4
3
2
1
.043
–.005
+.003
–0.13
+0.12
1.08
(INDEX AREA)
相關(guān)PDF資料
PDF描述
S29GL128M90FFIR23 MOSFET, Switching; VDSS (V): -60; ID (A): -6; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.04; RDS (ON) typ. (ohm) @4V[4.5V]: [0.06]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2300; toff (µs) typ: 0.055; Package: SOP-8
S29GL128M90FFIR80 MOSFET, Switching; VDSS (V): -60; ID (A): -6; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.04; RDS (ON) typ. (ohm) @4V[4.5V]: [0.06]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2300; toff (µs) typ: 0.055; Package: SOP-8
S29GL128M90FFIR82 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FFIR83 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TAIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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參數(shù)描述
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