參數(shù)資料
型號: S29GL128M90FFIR22
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 8M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝: 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數(shù): 133/160頁
文件大小: 2142K
代理商: S29GL128M90FFIR22
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
133
P r e l i m i n a r y
AC Characteristics
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”.)
2. Illustration shows device in word mode.
Figure 18. Chip/Sector Erase Operation Timings
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
相關(guān)PDF資料
PDF描述
S29GL128M90FFIR23 MOSFET, Switching; VDSS (V): -60; ID (A): -6; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.04; RDS (ON) typ. (ohm) @4V[4.5V]: [0.06]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2300; toff (µs) typ: 0.055; Package: SOP-8
S29GL128M90FFIR80 MOSFET, Switching; VDSS (V): -60; ID (A): -6; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.04; RDS (ON) typ. (ohm) @4V[4.5V]: [0.06]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2300; toff (µs) typ: 0.055; Package: SOP-8
S29GL128M90FFIR82 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FFIR83 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TAIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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