參數(shù)資料
型號： S29GL128M90FAIR80
廠商： Spansion Inc.
英文描述： MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 2.0/3.0; RDS (ON) typ. (ohm) @10V: 0.06; RDS (ON) typ. (ohm) @4V[4.5V]: [0.09]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1350; toff (µs) typ: 0.055; Package: SOP-8
中文描述： 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù)： 124/160頁
文件大?。?/td> 2142K
代理商： S29GL128M90FAIR80
124
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
AC Characteristics
Read-Only Operations-S29GL256M only
Parameter
JEDEC
Std.
Notes:
1. Not 100% tested.
2. See
Figure 11
and Table
34
for test specifications.
Read-Only Operations-S29GL128M only
Parameter
JEDEC
Std.
Notes:
1. Not 100% tested.
2. See
Figure 11
and Table
34
for test specifications.
Description
Test Setup
Speed Options
10
Unit
11
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
100
100
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
100
100
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
100
100
ns
t
PACC
Page Access Time
Max
30
30
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
30
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
Description
Test Setup
Speed Options
90
Unit
10
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
90
100
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
90
100
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
90
100
ns
t
PACC
Page Access Time
Max
25
30
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
25
30
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
相關(guān)PDF資料
PDF描述
S29GL128M90FAIR82 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FAIR83 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FDIR10 MOSFET, Switching; VDSS (V): -200; ID (A): -0.25; Pch : -; RDS (ON) typ. (ohm) @10V: 5; RDS (ON) typ. (ohm) @4V[4.5V]: 6; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: TSSOP-8
S29GL128M90FDIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TAIR80 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128M90TAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128M90TAIR13 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 90NS 56TSOP - Tape and Reel
S29GL128M90TFIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
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