參數(shù)資料
型號: S29GL064N11FAI040
廠商: Spansion Inc.
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 64兆,32兆位3.0伏只頁面模式閃存具有110納米MirrorBit工藝技術
文件頁數(shù): 76/79頁
文件大?。?/td> 2191K
代理商: S29GL064N11FAI040
76
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
17.3
VBK048—Ball Fine-pitch Ball Grid Array (BGA) 8.15x 6.15 mm Package
3338 \ 16-038.25 \ 10.05.04
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
SIDE VIEW
TOP VIEW
SEATING PLANE
A2
A
(4X)
0.10
10
D
E
C
0.10
A1
C
B
A
C
0.08
BOTTOM VIEW
A1 CORNER
B
A
M
φ
0.15
C
M
7
7
6
e
SE
SD
6
5
4
3
2
A
B
C
D
E
F
G
1
H
φ
b
E1
D1
C
φ
0.08
PIN A1
CORNER
INDEX MARK
PACKAGE
VBK 048
JEDEC
N/A
8.15 mm x 6.15 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
---
1.00
OVERALL THICKNESS
A1
0.18
---
---
BALL HEIGHT
A2
0.62
---
0.76
BODY THICKNESS
D
8.15 BSC.
BODY SIZE
E
6.15 BSC.
BODY SIZE
D1
5.60 BSC.
BALL FOOTPRINT
E1
4.00 BSC.
BALL FOOTPRINT
MD
8
ROW MATRIX SIZE D DIRECTION
ME
6
ROW MATRIX SIZE E DIRECTION
N
φ
b
e
48
TOTAL BALL COUNT
0.35
---
0.43
BALL DIAMETER
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
---
DEPOPULATED SOLDER BALLS
相關PDF資料
PDF描述
S29GL064N11FAI042 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11FAI060 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11FAI062 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11FAI070 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11FAI072 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關代理商/技術參數(shù)
參數(shù)描述
S29GL064N11FFIV10 功能描述:閃存 64Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N11FFIV20 制造商:Spansion 功能描述:
S29GL064N11TAIV20 制造商:Spansion 功能描述:IC 64M PAGE-MODE FLASH MEMORY - Trays 制造商:Spansion 功能描述:SPZS29GL064N11TAIV20 PG-MODE FLASH MEM
S29GL064N11TFIV10 功能描述:閃存 64Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N11TFIV13 制造商:Spansion 功能描述:FLASH MEMORY - Trays