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參數(shù)資料
| 型號(hào)： | S29GL064N11FAI040 |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| 中文描述： | 64兆，32兆位3.0伏只頁面模式閃存具有110納米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 62/79頁 |
| 文件大?。?/td> | 2191K |
| 代理商： | S29GL064N11FAI040 |
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62
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
13. DC Characteristics
Notes
1. I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Erase, Embedded Program, or Write Buffer Programming is in progress.
3. Not 100% tested.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns.
5. V
IO
= 1.65–1.95 V or 2.7–3.6 V.
6. V
CC
= 3 V and V
IO
= 3 V or 1.8 V. When V
IO
is at 1.8 V, I/Os cannot operate at 3 V.
Table 13.1
DC Characteristics, CMOS Compatible
Parameter
Symbol
Parameter Description (Notes)
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
(Note 1)
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
#WP/ACC: ±2.0 μA
μA
Others: ±1.0 μA
I
LIT
I
LO
A9 Input Load Current
V
CC
= V
CC max
; A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC max
CE# = V
IL,
OE# = V
IH
, V
CC
= V
CC max,
f = 1 MH
35
μA
Output Leakage Current
±1.0
μA
I
CC1
V
CC
Initial Read Current
(Note 1)
6
10
mA
CE# = V
IL,
OE# = V
IH
, V
CC
= V
CC max,
f = 5 MHz
25
30
CE# = V
IL,
OE# = V
IH
, V
CC
= V
CC max,
f = 10 MHz
45
50
I
CC2
V
CC
Intra-Page Read Current
(Note 1)
CE# = V
IL,
OE# = V
IH
, V
CC
= V
CC max
f = 10 MHz
1
10
mA
CE# = V
IL,
OE# = V
IH
, V
CC
= V
CC max
f = 33 MH
5
20
I
CC3
V
CC
Active Erase/Program Current
(Notes
2
,
3
)
CE# = V
IL,
OE# = V
IH
, V
CC
= V
CC max
50
60
mA
I
CC4
V
CC
Standby Current
V
CC
= V
CC max
; V
IO
= V
CC
; OE# = V
IH
;
V
IL
= (V
SS
+0.3V) / –0.1V;
CE#, RESET# = V
CC
±
0.3 V
V
CC
= V
CCmax
, V
IO
= V
CC
,
V
IL
= (V
SS
+0.3V) / –0.1V;
RESET# = V
SS
±
0.3 V
V
CC
= V
CCmax
, V
IO
= V
CC
,
V
IH
= V
CC
0.3 V;
V
IL
= (V
SS
+0.3V) / –0.1V;
WP#/ACC = V
IH
1
5
μA
I
CC5
V
CC
Reset Current
1
5
μA
I
CC6
Automatic Sleep Mode
(Note 4)
1
5
μA
I
ACC
ACC Accelerated Program Current
CE# = V
IL
, OE# = V
IH
,
V
CC
= V
CC
max,
WP#/ACC = V
IH
WP#/
ACC
10
20
mA
V
CC
50
60
mA
V
IL
V
IH
Input Low Voltage 1
(Note 5)
–0.1
0.3 x V
IO
V
IO
+ 0.3
V
Input High Voltage 1
(Note 5)
0.7 V
IO
V
V
HH
Voltage for ACC Erase/Program
Acceleration
V
CC
= 2.7 –3.6 V
11.5
12.5
V
V
ID
V
OL
V
OH1
V
OH2
V
LKO
Voltage for Autoselect
V
CC
= 2.7 –3.6 V
I
OL
= 100 μA
11.5
12.5
V
Output Low Voltage
(Note 5)
0.15 x V
IO
V
Output High Voltage
(Note 5)
I
OH
= –100 μA
0.85
V
IO
V
Low V
CC
Lock-Out Voltage
(Note 3)
2.3
2.5
V
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