參數(shù)資料
型號: S29GL064M90FDIR00
廠商: Spansion Inc.
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù): 31/160頁
文件大?。?/td> 2142K
代理商: S29GL064M90FDIR00
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
31
P r e l i m i n a r y
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The de-
vice automatically enables this mode when addresses remain stable for t
ACC
+
30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# con-
trol signals. Standard address access timings provide new data when addresses
are changed. While in sleep mode, output data is latched and always available to
the system. Refer to the “DC Characteristics” section on page 122 for the
automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading
array data. When the RESET# pin is driven low for at least a period of t
RP
, the
device immediately terminates any operation in progress, tristates all output
pins, and ignores all read/write commands for the duration of the RESET# pulse.
The device also resets the internal state machine to reading array data. The op-
eration that was interrupted should be reinitiated once the device is ready to
accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held
at V
SS
±0.3 V, the device draws CMOS standby current (I
CC5
). If RESET# is held
at V
IL
but not within V
SS
±0.3 V, the standby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would
thus also reset the Flash memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 15
for the timing diagram.
Output Disable Mode
When the OE# input is at V
IH
, output from the device is disabled. The output pins
are placed in the high impedance state.
相關(guān)PDF資料
PDF描述
S29GL064M90FDIR02 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR03 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064M90FFIR2 制造商:Spansion 功能描述:
S29GL064M90TAIR00 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray
S29GL064M90TAIR2 制造商:Spansion 功能描述:
S29GL064M90TAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray
S29GL064M90TAIR3 制造商:Spansion 功能描述:NOR Flash, 4M x 16, 48 Pin, Plastic, TSSOP