參數(shù)資料
型號(hào)： S29GL032M10BAIR63
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MirrorBit Flash Family
中文描述： 2M X 16 FLASH 3V PROM, 100 ns, PBGA48
封裝： 8 X 6 MM, BGA-48
文件頁數(shù)： 29/159頁
文件大小： 2217K
代理商： S29GL032M10BAIR63
Octorber 18, 2004 S29GLxxxM_00_B3
S29GLxxxM MirrorBit
TM
Flash Family
29
D a t a s h e e t
Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the in-
ternal command register. The command register itself does not occupy any addressable memory location. The
register is a latch used to store the commands, along with the address and data information needed to execute
the command. The contents of the register serve as inputs to the internal state machine. The state machine out-
puts dictate the function of the device.
Table 5
lists the device bus operations, the inputs and control levels they
require, and the resulting output. The following subsections describe each of these operations in further detail.
Table 5. Device Bus Operations
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 11.5–12.5
V, V
HH
= 11.5–12.5
V, X = Don’t Care, SA = Sector
Address, A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. Addresses are Amax:A0 in word mode; Amax:A-1 in byte mode. Sector addresses are Amax:A15 in both modes.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the
“Sector Group Protection and Unprotection” section.
3. If WP# = V
IL
, the first or last sector remains protected (for uniform sector devices), and the two outer boot sectors
are protected (for boot sector devices). If WP# = V
IH
, the first or last sector, or the two outer boot sectors are
protected or unprotected as determined by the method described in “Sector Group Protection and Unprotection”.
All sectors are unprotected when shipped from the factory (The SecSi Sector may be factory protected depending
on version ordered.)
4. D
IN
or D
OUT
as required by command sequence, data polling, or sector protect algorithm (see
Figure 2, on page 96
).
Operation
CE#
OE#
WE
#
RESET#
WP#
ACC
Addresses
(Note 1)
DQ0–
DQ7
DQ8–DQ15
BYTE#
= V
IH
BYTE#
= V
IL
Read
L
L
H
H
X
X
A
IN
D
OUT
D
OUT
DQ8–DQ14
= High-Z,
DQ15 = A-1
Write (Program/Erase)
L
H
L
H
(Note
3)
X
A
IN
(Note
4)
(Note
4)
Accelerated Program
L
H
L
H
(Note
3)
V
HH
A
IN
(Note
4)
(Note
4)
Standby
V
CC
±
0.3
V
X
X
V
CC
±
0.3 V
X
H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
X
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
X
X
High-Z
High-Z
High-Z
Sector Group Protect
(Note 2)
L
H
L
V
ID
H
X
SA, A6 =L,
A3=L, A2=L,
A1=H, A0=L
(Note
4)
X
X
Sector Group
Unprotect
(Note 2)
L
H
L
V
ID
H
X
SA, A6=H,
A3=L, A2=L,
A1=H, A0=L
(Note
4)
X
X
Temporary Sector
Group Unprotect
X
X
X
V
ID
H
X
A
IN
(Note
4)
(Note
4)
High-Z
相關(guān)PDF資料
PDF描述
S29GL032M10BFIR50 MirrorBit Flash Family
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S29GL064N11FFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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