參數(shù)資料
型號: S29GL032M10BAIR63
廠商: SPANSION LLC
元件分類: DRAM
英文描述: MirrorBit Flash Family
中文描述: 2M X 16 FLASH 3V PROM, 100 ns, PBGA48
封裝: 8 X 6 MM, BGA-48
文件頁數(shù): 133/159頁
文件大小: 2217K
代理商: S29GL032M10BAIR63
Octorber 18, 2004 S29GLxxxM_00_B3
S29GLxxxM MirrorBit
TM
Flash Family
133
D a t a s h e e t
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”.)
2. Illustration shows device in word mode.
Figure 18. Chip/Sector Erase Operation Timings
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array
data read cycle.
Figure 19. Data# Polling Timings (During Embedded Algorithms)
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ0–DQ6
RY/BY#
t
BUSY
Complement
True
Addresses
VA
t
CH
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
POLL
t
ACC
t
CE
t
OEH
t
DF
t
OH
t
RC
相關PDF資料
PDF描述
S29GL032M10BFIR50 MirrorBit Flash Family
S29GL032M10FBCR50 MirrorBit Flash Family
S29GL064N11FFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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