參數(shù)資料
型號： S29GL032M10BAIR63
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MirrorBit Flash Family
中文描述： 2M X 16 FLASH 3V PROM, 100 ns, PBGA48
封裝： 8 X 6 MM, BGA-48
文件頁數(shù)： 106/159頁
文件大小： 2217K
代理商： S29GL032M10BAIR63
106
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00_B3 Octorber 18, 2004
D a t a s h e e t
The Write Buffer Programming Sequence can be aborted in the following ways:
Load a value that is greater than the page buffer size during the Number of Locations to Program
step.
Write to an address in a sector different than the one specified during the Write-Buffer-Load com-
mand.
Write an Address/Data pair to a different write-buffer-page than the one selected by the Starting
Address during the write buffer data loading stage of the operation.
Write data other than the Confirm Command after the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded), DQ6 = toggle,
and DQ5=0. A Write-to-Buffer-Abort Reset command sequence must be written to reset the device for the next
operation.
Note that the SecSi Sector, autoselect, and CFI functions are unavailable when a program operation is in
progress.
This flash device is capable of handling multiple write buffer programming operations on the same write
buffer address range without intervening erases. For applications requiring incremental bit programming, a mod-
ified programming method is required; please contact your local Spansion representative.
Any bit in a write
buffer address range cannot be programmed from “0” back to a “1.”
Attempting to do so may cause the
device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a
succeeding read shows that the data is still “0.” Only erase operations can convert a “0” to a “1.”
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC pin depending on the particular
product. When the system asserts V
HH
on the WP#/ACC or ACC pin. The device uses the higher voltage on the
WP#/ACC or ACC pin to accelerate the operation.
Note that the
WP#/
ACC pin must not be at V
HH
for operations
other than accelerated programming, or device damage may result. WP# has an internal pullup; when uncon-
nected, WP# is at V
IH
.
Figure 3, on page 107
illustrates the algorithm for the program operation. Refer to the
“Erase and Program Op-
erations-S29GL032M only” on page 131
and
“AC Characteristics” on page 124
section for parameters, and
Figure 14, on page 126
for timing diagrams.
相關PDF資料
PDF描述
S29GL032M10BFIR50 MirrorBit Flash Family
S29GL032M10FBCR50 MirrorBit Flash Family
S29GL064N11FFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關代理商/技術參數(shù)
參數(shù)描述
S29GL032M10BBCR00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BBCR02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BBCR03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BBCR10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BBCR12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
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