參數(shù)資料
型號： S25FL008A
廠商： Spansion Inc.
英文描述： 8-Megabit CMOS 3.0 Volt Flash Memory with 50 MHz SPI (Serial Peripheral Interface) Bus
中文描述： 8兆閃存的CMOS 3.0伏，50兆赫SPI存儲器（串行外設接口）總線
文件頁數(shù)： 24/32頁
文件大?。?/td> 719K
代理商： S25FL008A
22
S25FL008A
S25FL008A_00_B0 August31,2006
D a t a
S h e e t
When CS# is driven high, the device transitions from DP mode to the standby mode after a delay of t
RES
,
as
previously described. The RES command always provides access to the Electronic Signature of the device
and can be applied even if DP mode has not been entered.
Any RES command issued while an erase, program, or WRSR operation is in progress not executed, and the
operation continues uninterrupted.
Figure 9.13
Release from Deep Power Down and
Read Electronic Signature (RES) Command Sequence
Notes
1.
2. The S25FL008A has an Electronic Signature ID of 13h.
The S25FL008A has a manufacturer ID of 01h, and a device ID consisting of the memory type (02h) and the memory capacity (13h).
10. Power-up and Power-down
During power-up and power-down, certain conditions must be observed. CS# must follow the voltage applied
on V
CC
, and must not be driven low to select the device until V
CC
reaches the allowable values as follows
(see
Figure 10.1
and
Table 10.1
):
At power-up, V
CC
(min) plus a period of t
PU
At power-down, V
SS
A pull-up resistor on Chip Select (CS#) typically meets proper power-up and power-down requirements.
C
S
#
S
CK
S
I
S
O
3
D
u
mmy Byte
s
Hi-Z
M
S
B
Deep Power-down Mode
S
t
a
nd
b
y Mode
0
1
2
3
4
5
6
7
8
9
10
2
8
29
3
0
3
1
3
2
33 3
4
3
5
3
6
3
7
38
Electronic ID o
u
t
Comm
a
nd
t
RE
S
2
3
22 21
3
2
1
0
7
6
5
4
3
2
1
0
M
S
B
Table 9.4
Command Definitions
Operation
Command
Description
One-Byte
Command Code
Address
Bytes
Dummy
Byte
Data Bytes
Read
READ
Read Data Bytes
03H (0000 0011)
3
0
1 to
∞
FAST_READ
Read Data Bytes at Higher Speed
0BH (0000 1011)
3
1
1 to
∞
RDID
Read Identification (
Note 1)
9FH (1001 1111)
0
0
1 to 3
Write Control
WREN
Write Enable
06H (0000 0110)
0
0
0
WRDI
Write Disable
04H (0000 0100)
0
0
0
Erase
SE
Sector Erase
D8H (1101 1000)
3
0
0
BE
Bulk (Chip) Erase
C7H (1100 0111)
0
0
0
Program
PP
Page Program
02H (0000 0010)
3
0
1 to 256
Status Register
RDSR
Read from Status Register
05H (0000 0101)
0
0
1 to
∞
WRSR
Write to Status Register
01H (0000 0001)
0
0
1
Power Saving
DP
Deep Power Down
B9H (1011 1001)
0
0
0
RES
Release from Deep Power Down
ABH (1010 1011)
0
0
0
Release from Deep Power Down and
Read Electronic Signature (
Note 2)
ABH (1010 1011)
0
3
1 to
∞
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