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參數(shù)資料
| 型號： | S25FL008A |
| 廠商： | Spansion Inc. |
| 英文描述： | 8-Megabit CMOS 3.0 Volt Flash Memory with 50 MHz SPI (Serial Peripheral Interface) Bus |
| 中文描述： | 8兆閃存的CMOS 3.0伏，50兆赫SPI存儲器（串行外設(shè)接口）總線 |
| 文件頁數(shù)： | 22/32頁 |
| 文件大?。?/td> | 719K |
| 代理商： | S25FL008A |
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20
S25FL008A
S25FL008A_00_B0 August31,2006
D a t a
S h e e t
9.10
Bulk Erase (BE)
The Bulk Erase (BE) command sets all the bits within the entire memory array to logic 1s. A WREN command
is required prior to writing the PP command.
The host system must drive CS# low, and then write the BE command on SI. CS# must be driven low for the
entire duration of the BE sequence. The command sequence is shown in
Figure 9.10
and
Table 9.4
.
The host system must drive CS# high after the device has latched the 8th bit of the CE command, otherwise
the device does not execute the command. The BE operation begins as soon as CS# is driven high. The
device internally controls the timing of the operation, which requires a period of t
BE
. The Status Register may
be read to check the value of the Write In Progress (WIP) bit while the BE operation is in progress. The WIP
bit is 1 during the BE operation, and is 0 when the operation is completed. The device internally resets the
Write Enable Latch to 0 before the operation completes (the exact timing is not specified).
The device only executes a BE command if all Block Protect bits (BP2:BP0) are 0 (see
Table 7.1 on page 11
).
Otherwise, the device ignores the command.
Figure 9.10
Bulk Erase (BE) Command Sequence
9.11
Deep Power Down (DP)
The Deep Power Down (DP) command provides the lowest power consumption mode of the device. It is
intended for periods when the device is not in active use, and ignores all commands except for the Release
from Deep Power Down (RES) command.
The DP mode therefore provides the maximum data protection
against unintended write operations.
The standard standby mode, which the device goes into automatically
when CS# is high (and all operations in progress are complete), should generally be used for the lowest
power consumption when the quickest return to device activity is required.
The host system must drive CS# low, and then write the DP command on SI. CS# must be driven low for the
entire duration of the DP sequence. The command sequence is shown in
Figure 9.11
and
Table 9.4
.
The host system must drive CS# high after the device has latched the 8th bit of the DP command, otherwise
the device does not execute the command. After a delay of t
DP,
the device enters the DP mode and current
reduces from I
SB
to I
DP
(see
Table 14.1 on page 24
).
Once the device has entered the DP mode, all commands are ignored except the RES command (which
releases the device from the DP mode). The RES command also provides the Electronic Signature of the
device to be output on SO, if desired (see sections
9.12
and
9.12.1)
.
DP mode automatically terminates when power is removed, and the device always powers up in the standard
standby mode. The device rejects any DP command issued while it is executing a program, erase, or Write
Status Register operation, and continues the operation uninterrupted.
0
1
2
4
5
6
7
Comm
a
nd
C
S
#
S
CK
S
I
3
S
O
Hi-Z
Mode 0
Mode
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S25FL008A0LMAI000 | 8-Megabit CMOS 3.0 Volt Flash Memory with 50 MHz SPI (Serial Peripheral Interface) Bus |
| S25F | Axialleaded Hermetically Sealed High Voltage Fast Recovery Rectifier Diode(反向電壓2500V，平均正向電流0.5A，軸向引腳，密封型，快速恢復(fù)整流二極管) |
| S20F | Axialleaded Hermetically Sealed High Voltage Fast Recovery Rectifier Diode(反向電壓2000V，平均正向電流0.5A，軸向引腳，密封型，快速恢復(fù)整流二極管) |
| S26MD01 | 8-Pin DIP Type SSR for Low Power Control |
| S26MD02 | 8-Pin DIP Type SSR for Low Power Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S25FL008A0LMAI000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8-Megabit CMOS 3.0 Volt Flash Memory with 50 MHz SPI (Serial Peripheral Interface) Bus |
| S25FL008A0LMAI001 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8-Megabit CMOS 3.0 Volt Flash Memory with 50 MHz SPI (Serial Peripheral Interface) Bus |
| S25FL008A0LMAI003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8-Megabit CMOS 3.0 Volt Flash Memory with 50 MHz SPI (Serial Peripheral Interface) Bus |
| S25FL008A0LMFI000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8-Megabit CMOS 3.0 Volt Flash Memory with 50 MHz SPI (Serial Peripheral Interface) Bus |
| S25FL008A0LMFI001 | 功能描述:閃存 3V 8MB Mirrorbit 50MHz RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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