參數(shù)資料
型號： RPI-1031
元件分類： 光電耦合器
英文描述： 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝： SURFACE MOUNT PACKAGE-6
文件頁數(shù)： 1/2頁
文件大?。?/td> 69K
代理商： RPI-1031
RPI-1031
Applications
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone, Fan herater,
Projector
Features
1) Surface Mount type
2) Optical Sensor
3) 4 Pirection Detector
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
Dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Dimension in parenthesis are
show for reference.
Surface Mount type 4 Direction Detector
1
3.9
2.4
0747D
31001
φ0.8
Pattern
Resist
3.7
1.9
0.9
Internal connection diagram
Detector 2
Detector 1
DC leakage
current
Ileok
15
VCE
=5V, IF=5mA
A
Stamp (year, week, day of the week)
Mark side (Symbol of check in company)
1PIN mark
Emitter
Emitter 1
Collector 2
Collector 1
Anode
Cathode
Fig.10 Response time measurement circuit
Fig.1 Forward current falloff
Fig.7 Response time vs.
collector current
Fig.9 Output characteristics
Fig.8 Dark current vs.
ambient temperature
Fig.4 Relative output vs. ambient
temperature
Fig.3 Power dissipation / collector power
dissipation vs. ambient temperature
Fig.2 Forward current vs. forward
voltage
Fig.5 Collector current vs.
forward current
Fig.6 DC leakage current vs.
forward current
AMBIENT TEMPERATURE : Ta (
°C)
FORWARD
CURRENT
:
I
F
(
mA
)
FORWARD
CURRENT
:
I
F
(mA)
FORWARD VOLTAGE : VF (
V)
POWER
DISSIPATION
/
COLLECTOR
POWER
DISSIPTION
:
P
D
/P
C
(mW)
AMBIENT TEMPERATURE : Ta (
°C)
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
AMBIENT TEMPERATURE : Ta (
°C)
COLLECTOR
CURRENT
:
I
C
(mA)
FORWARD CURRENT : IF
(mA)
DC
LEAKAGE
CURRENT
:
I
leak
(mA)
FORWARD CURRENT : IF
(mA)
LOAD RESISTANCE : RL
(k
)
RESPONSE
TIME
:
t
r
(
s)
0.9
1.1
1.5
1.3
50
60
30
20
40
10
0
040
20
60
0
0.5
1
1.5
2
02
4
6
8
10
13579
0
0.5
1
1.5
2
2.5
10%
90%
VOUT
RL1
RIP
VCC
input
RL2
VOUT2
VOUT1
AMBIENT TEMPERATURE : Ta
(
°C)
DARK
CURRENT
:
I
CEO
(nA)
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE: VCE
(V)
20
0
50
25
75
100
80
100
40
60
20
0
0.08
0.07
0.06
0.05
0.04
0.03
0.01
0.02
020
40
60
25 10
5
20
35
50
65
80
1.2
1
0.8
0.6
0.2
0.4
0
20
0
50
25
75
100
50
60
30
40
10
20
0
75
25
0.01
10
0.1
10000
1000
100
1
0
10
100
0
300
400
100
200
700
600
500
800
Parameter
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
Rise time
Fall time
Symbol
VF
IR
ICEO
λP
IC
fC
VCE(sat)
tr
tf
Min.
100
Typ.
1.3
800
10
Max.
1.6
10
0.5
0.4
Unit
VIF
=50mA
IF
=50mA
VR
=5V
VCE
=10V
VCE
=5V, IF=5mA
IF
=20mA, IC=0.1mA
VCC
=5V, IF=20mA, RL=100
A
nm
V
s
10
s
1
MHz
950
nm
Conditions
Maximum sensitivity wavelength
λP
800
nm
This product is not designed to be protected against electromagnetic wave.
VCC
=5V, IC=1mA, RL=100
tr tf
Response time
10
s
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
characteristics
Photo
transistor
Infrared
light
emitter
diode
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
30 to +85
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input
(LED)
Output
photo-
transistor
(
)
tr
tf
IF=50mA
IF=40mA
IF=30mA
IF=20mA
IF=10mA
IF=5mA
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