
RPI-122
Photointerrupter, Ultraminiature type
Applications
Optical control equipment
Cameras
Floppy disk drives
Features
1) Ultra-small.
2) Minimal influence from stray light.
3) Low collector-emitter saturation voltage.
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Dimension in parenthesis are
show for reference.
Through hole
Anode
Cathode
Collector
Emitter
Optical axis center
Gap
Cross-section B-B
Cross-section A-A
-0.1
+0
+0.05
-0.2
C0.7
-0.1
+0.15
C0.7
4-
φ0.8
2.7
0.25
0.4
(0.5)
4-0.5
4-0.4
(2)
4-0.2
(2.7)
2.5
±
0.5
2.3
1
3.3
2.8
±
0.1
0.8
0.1
0.9
±
0.1
2.6
±
0.1
3.4
1.3
3.6
±0.1
4.4
1.5
2
BA
0
1.0
2.0
0.5
1.5
2.5
100
125
50
75
25
0
d
Fig.1 Relative output current vs.
distance ( )
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
0.5
0
1.0
1.5
2.0
2.5
0
25
50
75
100
125
d
Fig.4 Relative output current vs.
distance ( )
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
20
0
20
40
60
80
100
10
50
40
30
20
0
Fig.2 Forward current falloff
FORWARD
CURRENT
:
I
F
(mA)
AMBIENT TEMPERATURE : Ta (
°C)
48
610
2
0
10
20
10mA
20mA
30mA
40mA
IF=50mA
Fig.10 Output characteristics
COLLECTOR
CURRENT
:
Ic
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
td
:
t r
:
t f
:
Fig.11 Response time measurement circuit
td
tr
tf
10%
90%
RL
VCC
Input
Output
10
0.05 0.1
1
10
100
RL=100
RL=1k
RL=500
Fig.8 Response time vs.
collector current
RESPONSE
TIME
:
t
(
s)
COLLECTOR CURRENT : Ic (mA)
0
25
50
75
100
25
0.1
1
10
100
1000
VCE=20V
VCE=10V
VCE=30V
Fig.9 Dark current vs.
ambient temperature
DARK
CURRENT
:
I
D
(nA)
AMBIENT TEMPERATURE : Ta (
°C)
40 20
0
20406080
100
20
40
60
80
160
100
120
140
0
Fig.6 Relative output vs. ambient
temperature
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
AMBIENT TEMPERATURE : Ta (
°C)
010
20
30
40
50
0
1
2
3
4
5
Fig.7 Collector current vs.
forward current
COLLECTOR
CURRENT
:
Ic
(mA)
FORWARD CURRENT : IF (mA)
0.4
0.2
0.6
1.0
0.8
1.2
1.4
1.8
1.6
0
20
40
10
30
50
FORWARD VOLTAGE : VF (
V)
FORWARD
CURRENT
:
I
F
(
mA
)
Fig.3 Forward current vs. forward
voltage
0.4
0.2
0.6
1.0
0.8
1.2
1.4
1.8
1.6
0
20
40
10
30
50
75
°C
50
°C
25
°C
0
°C
25°C
20
0
40
60
80
20
100
0
20
40
60
80
100
120
PD PC
POWER
DISSIPATION
/
COLLECTOR
POWER
DISSIPATION
:
P
D
/Pc
(mW)
AMBIENT TEMPERATURE : Ta (
°C)
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
Parameter
Symbol
VF
IR
ICEO
λP
IC
VCE(sat)
tr tf
Min.
0.18
Typ.
1.3
800
10
Max.
1.6
10
0.5
1.08
0.3
Unit
VIF
=50mA
VR
=5V
VCE
=10V
VCE
=0.7V, IF=3mA
IF
=20mA, IC=0.3mA
VCC
=5V, IF=20mA, RL=100
A
nm
mA
V
s
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation
voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
charac-
teristics
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
40 to +100
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input(LED)
Output
photo-
transistor
(
)
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
λP
fC
IF
=50mA
1
MHz
950
nm
Maximum sensitivity wavelength
λP
800
nm
This product is not designed to be protected against electromagnetic wave.
VCC
=5V, IC=1mA, RL=100
tr tf
Response time
10
s
Photo
transistor
Infrared light emitter diode