
RPI-121
Photointerrupter, Ultraminiature type
Applications
Optical control equipment
Cameras
Floppy disk drives
Features
1) Ultra-small.
2) Minimal influence from stray light.
3) Low collector-emitter saturation voltage.
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Dimension in parenthesis are
show for reference.
Gap
Collector
Optical axis center
Anode
Cathode
Emitter
Cross-section A-A
Through hole
A
4-
φ0.8
C0.7
2-R0.1
2-R0.3
2
2.65
(0.5)
0.4
4-0.5
4-0.4
(2)
4-0.2
(2.65)
0.8
1
Min.2
3.3
2.3
1.5
2.6
3.6
RELATIVE
COLLECTOR
CURRENT
:
I
C
(%)
DISTANCE : d
(mm)
0
1.0
2.0
0.5
1.5
2.5
100
125
50
75
25
0
d
RELATIVE
COLLECTOR
CURRENT
:
I
C
(%)
DISTANCE : d
(mm)
0
1.0
2.0
0.5
1.5
2.5
100
125
50
75
25
0
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE: VCE
(V)
48
610
2
0
2
4
6
8
10
IF=50mA
40mA
30mA
20mA
10mA
COLLECTOR CURRENT : IC
(mA)
10
0.05 0.1
1
10
100
RESPONSE
TIME
:
t
r
(
s)
RL=100
RL=1k
RL=500
20
0
20
40
60
80
100
10
50
40
30
20
0
AMBIENT TEMPERATURE : Ta (C)
FORWARD
CURRENT
:
I
F
(
mA
)
AMBIENT TEMPERATURE : Ta
(C)
DARK
CURRENT
:
I
CEO
(nA)
0
25
50
75
100
25
0.1
1
10
100
1000
VCE
=20V
VCE
=10V
VCE
=30V
COLLECTOR
CURRENT
:
I
C
(mA)
FORWARD CURRENT : IF
(mA)
0
1020304050
0
1
2
3
4
5
POWER
DISSIPATION
/
COLLECTOR
POWER
DISSIPTION
:
P
D
/P
C
(mW)
AMBIENT TEMPERATURE : Ta
(C)
20
0
40
60
80
20
100
0
20
40
60
80
100
120
PD PC
FORWARD
CURRENT
:
I
F
(mA)
FORWARD VOLTAGE : VF (
V)
0
10
20
30
40
50
0.4
0.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
75C
50C
25C
0C
25C
RELATIVE
COLLECTOR
CURRENT
:
I
C
(%)
AMBIENT TEMPERATURE : Ta
(C)
40 20
0
20406080
100
80
100
0
20
40
60
120
140
160
d
Fig.1 Relative output current vs.
distance ( )
Fig.4 Relative output current vs.
distance ( )
Fig.2 Forward current falloff
Fig.10 Output characteristics
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
td
:
t r
:
t f
:
Fig.11 Response time measurement circuit
td
tr
tf
10%
90%
RL
VCC
Input
Output
Fig.8 Response time vs.
collector current
Fig.9 Dark current vs.
ambient temperature
Fig.6 Relative output vs. ambient
temperature
Fig.7 Collector current vs.
forward current
Fig.3 Forward current vs. forward
voltage
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation
voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
charac-
teristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
VF
1.3
1.6
V
IF
50mA
IR
10
A
VR
5V
ICEO
0.5
A
VCE
10V
800
nm
IC1
0.7
mA
VCE
5V, IF
20mA
IC2
0.2
mA
VCE
5V, IF
5m
VCE(sat)
0.3
V
IF
20mA, IC
0.3mA
tr
tf
tr
tf
10
s
VCC
5V, IF
20mA, RL 100
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
λP
fC
IF
=50mA
1
MHz
950
nm
Maximum sensitivity wavelength
λP
800
nm
This product is not designed to be protected against electromagnetic wave.
VCC
=5V, IC=1mA, RL=100
Response time
10
s
Photo
transistor
Infrared
light
emitter
diode
λP
=
==
=
==
=
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
40 to +100
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input(LED)
Output
photo-
transistor
(
)