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參數(shù)資料
| 型號： | RFP4N40 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 4 A, 400 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | RFP4N40 |
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
200
2
1.5
1
0.5
N
O
0
I
D
= 4A
V
GS
= 10V
1.5
1
0.5
T
J
, JUNCTION TEMPERATURE (
0
C)
N
T
-50
0
50
125
150
175
0
V
DS
= 10V
I
D
= 250
μ
A
0
10
20
30
40
50
700
600
500
400
300
200
100
800
V
DS
, DRAIN TO SOURCE (V)
C
C
OSS
C
RSS
C
ISS
0
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
500
375
250
125
0
10
8
6
4
2
0
V
D
D
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
V
G
G
V
DD
= BV
DSS
V
DD
= BV
DSS
DRAIN SOURCE VOLTAGE
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
GATE
TO
SOURCE
VOLTAGE
R
L
=100
I
G(REF)
= 0.45mA
V
GS
= 10V
t, TIME (
μ
s)
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFM4N35, RFM4N40, RFP4N35, RFP4N40
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