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參數(shù)資料
| 型號(hào)： | RFP4N40 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 4 A, 400 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | RFP4N40 |
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
5
3
2
1
4
RFM4N35, RFM4N40
RFP4N35, RFP4N40
RFM4N35, RFP4N35
RFM4N40, RFP4N40
10
1
0.1
1
10
100
1000
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
O
C
T
J
= MAX RATED
V
DS
, DRAIN TO SOURCE VOLTAGE
I
D
,
RFM4N35, 40
RFP4N35, 40
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
7
6
5
4
3
2
1
I
D
,
V
GS
= 20 V
V
GS
= 8 - 10V
V
GS
= 7V
V
GS
= 6V
V
GS
= 4V
V
GS
= 5V
TC = 25
o
C
80
μ
s PULSE TEST
DUTY CYCLE
≤
2%
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
6
5
4
3
2
1
8
7
I
D
,
T
C
= -40
o
C
0
V
DS
= 20V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 125
o
C
4
3
2
1
0
2
3
I
D
, DRAIN CURRENT (A)
4
5
6
7
8
9
10
1
r
D
,
T
C
= -40
o
C
O
)
0
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
o
C
T
C
= 125
o
C
RFM4N35, RFM4N40, RFP4N35, RFP4N40
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