參數(shù)資料
型號(hào): RFP2P08
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs
中文描述: 2 A, 80 V, 3.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 4/5頁(yè)
文件大小: 39K
代理商: RFP2P08
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless otherwise Specified
(Continued)
1.5
1
0.5
-50
0
50
100
150
T
J,
JUNCTION TEMPERATURE (
o
C)
V
GS
= -10V
PULSE DURATION = 80
μ
s
I
D
= -2A
N
2
O
)
1.2
1.0
-50
0
50
100
T
J,
JUNCTION TEMPERATURE (
o
C)
N
T
1.4
0.9
0.8
0.7
0.6
1.1
1.3
150
V
DS
= -5V
I
D
= 250
μ
A
0
-10
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-50
C
100
80
60
40
20
0
C
OSS
C
RSS
120
140
160
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
0.75BV
DSS
0.75BV
DSS
0.50BV
DSS
0.50BV
DSS
0.25BV
DSS
0.25BV
DSS
GATE
SOURCE
VOLTAGE
R
L
= 50
I
G(REF)
= 0.095mA
V
GS
= -10V
V
DD
= BV
DSS
V
DD
= BV
DSS
I
G
(REF)
I
(ACT)
20
80
DRAIN SOURCE
VOLTAGE
I
G
(REF)
I
(ACT)
V
D
,
t, TIME (
μ
s)
V
G
,
100
75
50
25
0
10
8
6
4
0
2
Test Circuit and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
t
ON
10%
0
RFP2P08, RFP2P10
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