參數(shù)資料
型號(hào)： RFP2P08
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs
中文描述： 2 A, 80 V, 3.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/5頁
文件大?。?/td> 39K
代理商： RFP2P08
2
RFP2P08
RFP2P10
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-80
-100
V
-80
-100
V
2
5
2
5
A
A
±
20
±
20
V
25
0.2
25
0.2
W
W/
o
Caaa
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T
pkg
-55 to 150
-55 to 150
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFP2P08
BV
DSS
ID = -250
μ
A, VGS = 0
-80
-
-
V
RFP2P10
-100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250
μ
A
-2
-
-4
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
-1
μ
A
-
-
-25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= -2A, V
GS
= -10V (Figures 6, 7)
-
-
3.500
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= -2A, V
GS
= -10V
I
D
=
≈
1A, V
DD
= -50V, R
G
= 50
, V
GS
= -10V,
R
L
= 46.5
(Figures 10, 11, 12)
-
-
-7.0
V
Turn-On Delay Time
t
d(ON)
-
7
25
ns
Rise Time
t
r
-
15
45
ns
Turn-Off Delay Time
t
d(OFF)
-
14
45
ns
Fall Time
t
f
-
11
25
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= -25V, f =1MHz
(Figure 9)
-
-
150
pF
Output Capacitance
C
OSS
-
-
80
pF
Reverse Transfer Capacitance
C
RSS
-
-
30
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -1A
-
-
-1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= -2A, dI
SD
/dt = 50A/
μ
s
-
135
-
ns
NOTES:
2. Pulse Test: Pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFP2P08, RFP2P10
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