參數(shù)資料
型號: RFP2P10
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs
中文描述: 2 A, 100 V, 3.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 1/5頁
文件大?。?/td> 39K
代理商: RFP2P10
1
Semiconductor
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998
RFP2P08, RFP2P10
-2A, -80V and -100V 3.500 Ohm,
P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters. motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA_____.
Features
-2A, -80V and -100V
r
DS(ON)
= 3.500
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Symbol
Packaging
TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2P08
TO-220AB
RFP2P08
RFP2P10
TO-220AB
RFP2P10
NOTE: When ordering, use entire part number.
D
G
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
October 1998
File Number
2870.1
[ /Title
(RFP2P
08,
RFP2P
10)
/Sub-
ject (-
2A, -
80V
and -
100V,
3.500
Ohm,
P-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor,
P-Chan-
nel
Power
MOS-
FETs,
TO-
220AB)
/Cre-
ator ()
/DOCI
NFO
pdf-
Data Sheet
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