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參數(shù)資料
| 型號(hào)： | RFP12P10 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 和 100V, 0.300 Ω, P溝道增強(qiáng)模式功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 37K |
| 代理商： | RFP12P10 |
4-163
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
-8
-7
-6
-5
-4
-3
-2
-1
0
-12
-11
-10
-9
-13
-14
100
10
1
0.11
10
100
1000
I
D
,
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
V
DS
, DRAIN TO SOURCE (V)
T
C
= 25
o
C
DC
I
D
MAX CONTINUOUS
T
J
= MAX RATED
RFP12P08
RFP12P10
30
20
10
0
-2
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
-4
I
D
D
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= -20V
-6
-8
-10
V
GS
= -7V
V
GS
= -8V
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
V
GS
= -3V
V
GS
= -10V
40
0
V
GS
= -9V
I
D
D
20
12
4
0
-2
-4
-6
-7
V
GS,
GATE TO SOURCE VOLTAGE (V)
0
V
DS
= -10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
125
o
C
-40
o
C
125
o
C
25
o
C
-40
o
C
16
8
-3
-5
-8
D
I
D,
DRAIN CURRENT (A)
0.3
0.2
0.1
0
0
2
8
12
20
R
)
4
6
10
14
V
GS
= -10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
25
o
C
-40
o
C
125
o
C
18
16
0.4
RFP12P08, RFP12P10
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